UF8010

UNISONIC TECHNOLOGIES CO., LTD UF8010 Preliminary Power MOSFET 80 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control. FEATURES * RDS(ON) :12mΩ (Typ.) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective COSS to simplify design SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF8010L-TA3-T UF8010G-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-348.a UF8010 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage VGS ±20 V Continuous Drain Current (VGS=10V,TC=25°C) ID 80 (Note 2) A Pulsed Drain Current IDM 320 A Single Pulse (Note 2,3) EAS 310 mJ Avalanche Energy 26 mJ Repetitive EAR Avalanche Current IAR 45 A Peak Diode Recovery dv/dt (Note 4) dv/dt 16 V/ns 260 W Power Dissipation (TC=25°C) PD Derating above 25°C 1.8 W/°C Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ + 175 °C Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 3. Starting TJ = 25°C, L = 0.31mH, RG =25Ω, IAS = 45A. 4. ISD≤45A, di/dt≤110A/μs, VDD≤BVDSS, TJ≤ 175°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC MIN TYP MAX 62 0.57 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Forward Current Gate-Source Reverse Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS =0 V, ID =250μA VDS=100V,VGS =0V VGS = 20 V VGS = -20 V VDS = VGS, ID = 250μA VGS = 10 V, ID = 45A (Note 1) MIN 100 20 200 -200 2.0 12 3830 480 59 15 130 61 120 81 22 26 4.0 15 TYP MAX UNIT V μA nA nA V mΩ pF pF pF ns ns ns ns nC nC nC VDS =25 V,VGS =0V, f =1.0MHz VDD =50V,ID = 80A, RG = 39Ω VGS = 10V (Note 1) VDS=80V, VGS=10V ID= 80A (Note 1) 120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-348.a UF8010 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS IS=80 A ,VGS =0 V, 1.3 V Drain-Source Diode Forward Voltage VSD TJ = 25°C (Note 1) Maximum Continuous Drain-Source IS 80 A Diode Forward Current Maximum Pulsed Drain-Source Diode 320 A ISM Forward Current (Note 1,2) IF=80 A, VDD=50V, TJ = 150℃ Reverse Recovery Time tRR 99 150 ns di/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 460 700 nC Notes: 1. Pulse width ≤ 300μs; duty cycle ≤ 2% 2. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-348.a UF8010 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit + 3 + 2 4 + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer D.U.T. 1 RG · dv/dt controlled by RG · Driver same type as D.U.T · ISD controlled by Duty Factor “D” · D.U.T. – Device Under Test + - VDD * Reverse Polarity of D.U.T. for P-Channel 1 Driver Gate Drive P.W. Period D= P.W. Period VGS=10V* 2 D.U.T. ISD Waveform Reverse Body Diode Forward Recovery Current di/dt Current 3 D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Forward Drop 4 Inductor Current Ripple≤5％ * VGS = 5.0V for Logic Level Devices ISD VDD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-348.a UF8010 Switching Time Test Circuit RD VDS VGS RG Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Time Waveforms VDS 90% D.U.T. VDD + 10% VGS td(on) tR td(off) tF 10V Pulse Width≤1μs Duty Factor≤0.1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-348.a UF8010 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-348.a