UG8J-AL5-0-R

UNISONIC TECHNOLOGIES CO., LTD UG8J EMITTER COMMON (DUAL DIGITAL TRANSISTORS) FEATURES * Two DTC143Z chips in a SOT-353 package. * Mounting cost and area can be cut in half. 3 2 1 NPN EPITAXIAL SILICON TRANSISTOR 5 STRUCTURE * Epitaxial planar type * NPN silicon transistor (Built-in resistor type) 4 SOT-353 *Pb-free plating product number: UG8JL ORDERING INFORMATION Order Number Normal Lead Free Plating UG8J-AL5-0-R UG8J-AL5-0-R Package SOT-353 1 B1 Pin Assignment 2 3 4 E1,E2 B2 C2 5 C1 Packing Tape Reel U G8JL-AL5-0-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating (1) R: Tape Reel (2) refer to Pin Assignment (3) AL5: SOT-353 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING INFORMATION U G8J Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R222-002,A UG8J ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Supply Voltage Input Voltage Output Current Total Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR SYMBOL VCC VIN IOUT IC(MAX) PD TJ TSTG RATINGS 50 30 -5 100 100 150 (Note1) +150 -40 ~ +150 UNIT V V mA mW ℃ ℃ Note 1. *120mW per element must not be exceeded. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Input Voltage Output Voltage Input Current Output Current DC Current Gain Transition Frequency Input Resistance Resistance Ratio Note * Transition frequency of the device. SYMBOL VI(OFF) VI(ON) VO(ON) IIN IO(OFF) GI fT R1 R2/R1 TEST CONDITIONS VCC=5V, IOUT=100µA VOUT=0.3V, IOUT=5mA IOUT=5mA, IIN=0.25mA VIN=5V VCC=50V, VIN=0V VOUT=5V, IOUT=10mA VCE=10V, IE=-5mA, f=100MHz* MIN 1.3 TYP MAX UNIT 0.5 V 0.1 0.3 1.8 0.5 V mA µA 80 3.29 8 250 MHz 4.7 6.11 KΩ 10 12 EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2) (3) R1 DTr2 (4) R2 (2) R2 (1) R1 DTr1 (5) R1 =4.7kΩ R2 =4.7kΩ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R222-002,A UG8J TYPICAL CHARACTERISTICS Input Voltage vs. Output Current (ON Characteristics) 100 50 NPN EPITAXIAL SILICON TRANSISTOR Output Current vs. Input Voltage (OFF Characteristics) 10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VCC=5V VOUT=0.3V Output current, I OUT (A) Input Voltage, VI(ON) (V) 20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=-20℃ 25℃ 100℃ Ta=100℃ 25℃ -20℃ Output Current, I OUT (A) 0.5 1 1.5 2.0 2.5 3.0 Input Voltage, VI(OFF) (V) D C Current Gain vs. Output Current 1k 500 DC Current Gain, GI 200 100 50 20 10 5 Outptut Voltage, VO(ON) (V) Ta=100℃ 25 ℃ -20 ℃ VOUT=5V Output Voltage vs. Output Current 1 Ta=100℃ IOUT/I IN=20 500m 25℃ 200m -20℃ 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Output Current, I OUT ( A) Output Current, I OUT ( A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R222-002,A