UK2996-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UK2996 600V SILICON N-CHANNEL POWER MOSFET DESCRIPTION The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM motor drive controls. MOSFET 1 TO-220 FEATURES * Fast switching times * Improved inductive ruggedness * High forward transfer admittance * Low on resistance * Low leakage current * Lower input capacitance 1 TO-220F *Pb-free plating product number: UK2996L SYMBOL 2. Drain 1. Gate 3. Source ORDERING INFORMATION Order Number Normal Lead Free Plating UK2996-TA3-T UK2996L-TA3-T UK2996-TF3-T UK2996L-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source UK2996L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 16www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-063 ,A UK2996 ABSOLUTE MAXIMUM RATING PARAMETER Drain to Source Voltage Continuous Drain Current Pulsed Drain Current Drain to Gate Voltage (RGS = 20 kΩ) Gate to Source Voltage Avalanche Current Single Pulsed Avalanche energy (Note 2) Repetitive Avalanche Energy (Note 3) Total Power Dissipation (Tc = 25℃) Operating Temperature Range SYMBOL VDSS ID IDM VDGR VGSS IAR EAS EAR PD TJ RATINGS 600 10 30 600 ±30 10 252 4.5 45 -55 ~ +150 MOSFET UNIT V A A V V A mJ mJ W ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 4.41 mH, IAR = 10 A, VDD = 90 V, RG = 25 Ω, starting TJ = 25°C. 3. Pulse width and frequency is limited by TJ. THERMAL DATA CHARACTERISTICS Thermal Resistance, Channel to Ambient Thermal Resistance, Channel to Case SYMBOL θJA θJC RATINGS 62.5 2.78 UNIT ℃/ W ℃/ W ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETER SYMBOL TEST CONDITIONS Gate−Source Breakdown Voltage BVGSS VDS = 0V, IG = ±10µA Drain−Source Breakdown Voltage BVDSS VGS = 0V, ID = 10mA Gate Threshold Voltage VGS(TH) VDS = 10V, ID = 1mA Gate Source Leakage Current IGSS VGS = ±25V, VDS = 0V Drain Source Leakage Current IDSS VDS = 600V, VGS = 0V Static Drain−Source ON Resistance RDS (ON) VGS = 10V, ID = 5A Forward Transconductance gFS VDS = 10V, ID = 5A Input Capacitance Reverse Transfer Capacitance Output Capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on Delay Time Turn-on Rise Time Turn−off Delay Time CISS CRSS COSS QG QGS QGD tON tR tOFF ID = 10A, VDD ≈ 400V, VGS = 10V VDS = 20V, VGS = 0V, f = 1MHz MIN TYP MAX UNIT ±30 V 600 V 2.0 4.0 V ±10 µA 100 µA 0.74 1. 0 Ω 3.4 6.8 S 1500 13 140 38 21 17 55 15 145 nC pF RL =60Ω I D=5A VOUT Switching Time Turn-off Fall Time tF 10V VGS 0V 50 Ω VDD ≈ 3 00V tP=10 μs, Duty ≤ 1% 27 ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-063 ,A UK2996 SOURCE−DRAIN DIODE CHARACTERISTICS (Ta = 25°C) PARAMETER SYMBOL TEST CONDITIONS Diode Forward Voltage VSD VGS = 0V, IS = 10A Continuous Source Current (body diode) IS Integral Reverse p-n Junction Diode in the MOSFET MOSFET MIN TYP MAX UNIT -1.7 V 10 A Drain Pulse Source Current (body diode) ISM 30 A G ate Source Reverse Recovery Time Reverse Recovery Charge tRR QRR VGS = 0V, IS = 10A, dIF/dt = 100 A/µs 1600 17 ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-063 ,A UK2996 TEST CIRCUIT AND WAVE FORM VDS LL ID BVDSS I AR VDD DUT tP tP VDD ID (t) MOSFET RG +15V -15V VDS (t) Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-063 ,A UK2996 TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Voltage COMMON SOURCE TC=25℃ 8 PULSE TEST MOSFET 5.5V 5.25V Drain-Source on Resistance, RDS (ON) (Ω) 10 2.2 2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Drain-Source on Resistance vs. Drain Current COMMON SOURCE TC=25℃ PULSE TEST Drain Current, ID (A) 6 4 2 0 5V 4.75V 4.5V VGS=4V 0 4 8 12 16 20 VGS=10V 0.4 0.2 0 0.3 0.5 Drain-Source Voltage, VDS (V) 1 35 10 Drain Current, ID (A) 30 12 10 Drain Current, ID (A) Drain Current vs. Gate-Source Voltage Drain-Source Voltage, VDS (V) COMMON SOURCE VDS =10V PULSE TEST 16 Drain-Source Voltage vs. Gate-Source Voltage COMMON SOURCE TC=25℃ PULSE TEST 12 8 6 100℃ 4 2 0 0 25℃ T C=-55℃ I D=10A 8 I D=5A ID=2.5A 0 4 12 2 4 6 8 10 Gate-Source Voltage, VGS (V) 16 0 4 8 12 16 Gate-Source Voltage, VGS (V) 20 30 Continuous Source Current, I S (A) Continuous Source Current vs. DrainSource Voltage COMMON SOURCE TC=25℃ PULSE TEST 10 5 3 1 0.5 0.3 0.1 10 3 VGS =0V 1 0 -0.4 -0.8 Drain-Source Voltage, VDS (V) -1.2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-063 ,A UK2996 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-063 ,A