UN1066G-AB3-R

UNISONIC TECHNOLOGIES CO., LTD UN1066 NPN SILICON TRANSISTOR HIGH SPEED SWITCHING TRANSISTOR  FEATURES * Low VCE(SAT) voltage, up to 3A * Suitable for fast switching applications * High current gain  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UN1066G-AB3-R SOT-89 UN1066L-TN3-R UN1066G-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel MARKING SOT-89 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-252 1 of 5 QW-R209-023.D UN1066  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 15 V Emitter to Base Voltage BVEBO 5 V Collector Current IC 6 A Collector Current (Pulse) ICP 9 A Base Current IB 600 mA Collector Dissipation (TC=25°C) PC 3.5 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=10μA, IE=0 BVCEO IC=1mA, RBE=∞ BVEBO IE=10μA, IC=0 IC=1.5A, IB=30mA VCE(SAT) IC=3A, IB=60mA VBE(SAT) IC=1.5A, IB=30mA ICBO VCB=12V, IE=0 IEBO VEB=4V, IC=0 hFE VCE=0.5V, IC=5A fT VCE=2V, IC=500mA Cob VCB=10V, f=1MHz tON Refer to Test Circuit tSTG Refer to Test Circuit tF Refer to Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 20 15 5 TYP MAX 180 300 1.2 0.1 0.1 UNIT V V V mV mV V µA µA 50 50 250 25 MHz pF ns ns ns 250 100 2 of 5 QW-R209-023.D UN1066  NPN SILICON TRANSISTOR TEST CIRCUIT PW=20µs D.C.≤1% IB1 IB2 OUTPUT INPUT VR RB RL 50Ω 100µF 470µF VBE=-5V VCC=5V 20IB1=-20IB2=IC=1.5A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-023.D UN1066 DC Current Gain, hFE Collector Current, IC (A) TYPICAL CHARACTERISTICS Base-to-Emitter Saturation Voltage, VBE(SAT) (V) Collector-to-Emitter Saturation Voltage, VCE(SAT) (mV)  NPN SILICON TRANSISTOR VCE(SAT) vs. IC 1000 6 IC/IB=50 Ta=25°C 4 2 100 6 4 2 10 5 0.01 0.1 1.0 Collector Current, IC (A) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-023.D UN1066 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-023.D