UP1753-AA3-R

UP1753-AA3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    UP1753-AA3-R - HIGH CURRENT LOW V TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
UP1753-AA3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD UP1753 HIGH CURRENT LOW VCE(SAT) TRANSISTOR DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application. NPN SILICON TRANSISTOR 1 FEATURES *VCE(SAT) typ is below 300mV at 5A * Max continuous current 6 A * BVCEO is 100V minimum. SOT-223 *Pb-free plating product number: UP1753L ORDERING INFORMATION Order Number Normal Lead Free Plating UP1753-AA3-R UP1753L-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel U P1753L-AA3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R220-020,A UP1753 ABSOLUTE MAXIMUM RATINGS NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 6 A Power Dissipation at Ta =25℃ PD 3 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS Ta= 25℃ (unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL TEST CONDITIONS BVCBO IC=100µA BVCEO IC=10mA (Note1) BVEBO Ic=100µA VCB=150V, Ta=25℃ VCB=150V Collector Cut-Off Current ICBO Ta=100 ℃ VCB=150V, Ta=25℃ Collector Cut-Off Current ICER R≤1KΩ VCB=150V, Ta=100 ℃ Emitter Cut-Off Current IEBO VEB=6V IC=0.1A, IB=5mA (Note1) Collector-Emitter Saturation Voltage VCE(SAT) IC=2A, IB=100mA (Note1) IC=5A, IB=500mA (Note1) Base-Emitter Saturation Voltage VBE(SAT) IC=5A, IB=500mA (Note1) Base-Emitter Turn-On Voltage VBE(ON) IC=5A, VCE =2V (Note1) IC=10mA, VCE =2V IC=2A, VCE =2V (Note1) Static Forward Current Transfer Ratio hFE IC=4A, VCE =2V (Note1) IC=10A, VCE =2V (Note1) Transition Frequency Output Capacitance fT IC=100mA, VCE =10V f=50MHz VCB=10V, f=1MHz Cob tON IC=1A, VCC =10V Switching Times IB1=IB2=100mA tOFF Note: 1.Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%, MIN 200 100 6 TYP 300 120 8 MAX UNIT V V V nA µA nA µA nA mV mV mV mV mV 10 1 10 1 10 50 150 330 1250 1100 100 100 50 20 200 200 100 100 38 50 1600 300 MHz pF ns ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R220-020,A UP1753 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector-Emitter Saturation Voltagevs. Collector Current Collector-Emitter Saturation Voltage, VCE(SAT) (V) DC Current Gain vs. Collector Current 1.6 DC Current Gain, hFE 0.8 0.6 I C/IB=10 0.4 I C/IB=50 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE=1V VCE=5V 0.2 0 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 Collector Current, I C (A) Collector Current, IC (A) Base-Emitter Saturation vs. Collector Current Base-Emitter Saturation, VBE(SAT) (V) Base-Emitter Turn-On Voltage vs. Collector Current 1.2 Base-Emitter, VBE (V) 2.0 1.5 IC/IB =10 1.0 I C/IB=50 0 .5 0.001 0.01 0.1 1 10 100 Collector Current, IC (A) 1.0 VCE=1V 0.8 0.6 0.4 0.001 0.01 0.1 1 10 100 Collector Current, IC (A) Safe Operating Area 10 Collector Current , IC (A) 1 0.1 DC 1s 100ms 10ms 1ms 300µ Ta=25℃ 0.01 1 10 100 0.1 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R220-020,A UP1753 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R220-020,A
UP1753-AA3-R
1. 物料型号 - 型号:UP1753 - 无铅镀层产品型号:UP1753L

2. 器件简介 - UTC UP1753专为高电流和低VCE(SAT)设计,适用于功率放大和功率开关应用。

3. 引脚分配 - SOT-223封装的引脚如下: - 1号引脚:B(基极) - 2号引脚:C(集电极) - 3号引脚:E(发射极)

4. 参数特性 - 典型VCE(SAT)在5A电流下低于300mV - 最大连续电流6A - 最低BVCEO为100V

5. 功能详解 - 包含绝对最大额定值、电气特性等,涉及击穿电压、集电极电流、功耗、结温等。

6. 应用信息 - 适用于功率放大和功率开关应用。

7. 封装信息 - 封装类型:SOT-223 - 有铅和无铅镀层版本均提供。
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