UP2855

UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions and DC-DC circuits. . FEATURES * Extremely low saturation voltages * Peak current up to 10A * 4A continuous current ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2855L-AA3-R UP2855G-AA3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-024.b UP2855 PARAMETER Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified ) SYMBOL VCBO VCEO VEBO IC ICM RATINGS UNIT -180 V -140 V -7 V -4 A -10 A 3.0 (Note 1) Power Dissipation PD W 1.6 (Note 2) Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 1) Peak Pulse Current THERMAL RESISTANCE RATINGS UNIT 42 (Note 1) Junction to Ambient θJA °C/W 78 (Note 2) Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. PARAMETER SYMBOL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-Base Breakdown Voltage VCBO IC=-100μA -180 Collector-Emitter Breakdown Voltage VCER IC=-1μA, RB≤1kΩ -180 Collector-Emitter Breakdown Voltage VCEO IC=-10mA (Note 1) -140 Emitter-Base Breakdown Voltage VEBO IE=-100μA -7.0 VCB=-150V Collector Cut-Off Current ICBO VCB=-150V, Tamb=100°C VCB=-150V, Collector Cut-Off Current ICER R≤1kΩ Tamb=100°C Emitter Cut-Off Current IEBO VEB=-6V IC=-0.1A, IB=-5mA Collector-Emitter Saturation Voltage IC=-0.5A, IB=-50mA VCE(SAT) (Note 1) IC=-1A, IB=-100mA IC=-3A, IB=-300mA Base-Emitter Saturation Voltage VBE(SAT) IC=-3A, IB=-300mA(Note 1) Base-Emitter Turn-On Voltage VBE(ON) IC=-3A, VCE=-5V (Note 1) IC=-10mA, VCE=-5V 100 Static Forward Current Transfer IC=-1A, VCE=-5V 100 hFE Ratio (Note 1) IC=-3A, VCE=-5V 45 IC=-10A, VCE=-5V IC=-100mA, VCE=-10V Transition Frequency fT f=50MHz Output Capacitance (Note 1) COBO VCB=-10V, f=1MHz IC=-1A, VCC=-50V, tON Switching Times IB1=-IB2=-10mA tOFF Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%. TYP -200 -200 -160 -8.0