US108S

UTC US108S/N SCRs DESCRIPTION The UTC US108S/N is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. SCR 1 TO-220 1: CATHODE 2: ANODE 3: GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages US108S/N-4 US108S/N-6 US108S/N-8 RMS on-state current (180° conduction angle) (Tc = 110°C) Average on-state current (180° conduction angle) (Tc = 110°C) Non repetitive surge peak on-state current (Tj = 25°C) tp=8.3ms tp=10ms I²t Value for fusing (tp = 10 ms ,Tj = 25°C) Critical rate of rise of on-state current (IG = 2 x IGT , tr ≤ 100 n s, Tj = 125°C, F = 60 Hz) Peak gate current (tp=20µs, Tj = 125°C) Maximum peak reverse gate voltage Average gate power dissipation (Tj = 125°C) Storage junction temperature range Operating junction temperature range SYMBOL VDRM VRRM IT(RMS) IT(AV) ITSM I²t dI/dt IGM VRGM PG(AV) Tstg Tj RATING US108S US108N 400 600 800 8 5 73 70 24.5 50 4 5 1 -40 ~ +150 -40 ~ +125 100 95 45 UNIT V A A A A²S A/µs A V W °C °C UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-012,B UTC US108S/N UTC US108S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified) SCR TEST CONDITIONS VD = 12 V, RL =140Ω VD = 12 V, RL=140Ω PARAMETER Gate trigger Current Gate trigger Voltage Gate non-trigger voltage Reverse gate voltage Holding Current Latching Current Circuit Rate Of Change Of off-state Voltage On-state voltage SYMBOL IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM MIN MAX. 200 0.8 UNIT µA V V VD = VDRM, RL = 3.3 kΩ, RGK = 220Ω Tj = 125°C IRG = 10 µA IT = 50 mA, RGK = 1 kΩ IG = 1 mA ,RGK = 1 kΩ 0.1 8 5 6 5 1.6 0.85 46 5 1 V mA mA V/µs V V mΩ µA mA VD = 65 % VDRM ,RGK = 220 Ω Tj = 125°C ITM = 16A, tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Threshold Voltage Dynamic Resistance Off-state Leakage Current VDRM = VRRM, RGK = 220 Ω Tj = 25°C Tj = 125°C UTC US108N(STANDARD) ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified) PARAMETER Gate trigger Current Gate trigger Voltage Gate non-trigger voltage Holding Current Latching Current Circuit Rate Of Change Of off-state Voltage On-state voltage SYMBOL IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM TEST CONDITIONS VD = 12 V, RL =33Ω VD = 12 V, RL=33Ω MIN 2 MAX. 15 1.3 UNIT mA V V VD = VDRM, RL = 3.3 kΩ, Tj = 125°C IT = 100 mA, Gate open IG = 1.2 IGT VD = 67 % VDRM , Gate open,Tj = 125°C 0.2 30 70 150 1.6 0.85 46 5 2 mA mA V/µs V V mΩ µA mA ITM = 16A, tp = 380 µs, Tj = 25°C Tj = 125°C Tj = 125°C Threshold Voltage Dynamic Resistance Off-state Leakage Current VDRM = VRRM Tj = 25°C Tj = 125°C THERMAL RESISTANCES PARAMETER Junction to case (DC) Junction to ambient (DC) SYMBOL Rth(j-c) Rth(j-a) VALUE 20 60 UNIT K/W K/W UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-012,B UTC US108S/N Fig.1:Maximum average power dissipation vs average on-state current 8 7 6 5 4 3 2 1 0 0 1 2 IT(av)(A) 3 4 360° p(w) α=180° 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 SCR Figure.2:Average and D.C. on-state current vs case temperature IT(av)(A) DC α=180° α 5 6 2.0 1.0 0.0 0 25 Tcase(℃) 50 75 100 125 Figure.3: Relative variation of thermal impedance junctio to case vs pulse duration K=[Zth(j-c)/Rth(j-c)] 1.0 Figure.4:Relative variation of gate trigger current,holding current and latching vs junction temperature .(US108S) 2.0 1.8 1.6 1.4 IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃) IGT IH&IL Rgk=1kΩ 0.5 1.2 1.0 0.8 0.2 0.6 0.4 0.1 tp(s) 1E-2 1E-1 1E+0 0.2 0.0 -40 -20 0 20 Tj(℃) 40 60 80 100 120 140 1E-3 Figure.4-2:Relative variation of gate trigger current,holding current and latching vs junction temperature .(US108N) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25 ℃) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 120 140 Figure.5:Relative variation of holding current vs gatecathode resistance(typical values) (US108S) IH(Rgk)/IH(Rgk=1k Ω) IGT TJ=25℃ IH&IL Rgk(kΩ) 1E-1 1E+0 1E+1 Tj(℃) 40 60 80 100 1E-2 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-012,B UTC US108S/N Fig.6: Relative variation of dV/dt immunity vs gatecathode resistance(typical values) (US108S) 10.00 dV/dt(Rgk)/dV/dt(Rgk=220Ω) Tj=125℃ VD=0.67* VDRM 15.0 12.5 10.0 7.5 0.10 5.0 2.5 0.01 0 200 400 Rgk(Ω) 600 800 1000 1200 1400 1600 1800 2000 0.0 Cgk(nF) 0 20 40 60 dV/dt(Cgk)/dV/dt(Rgk=220Ω) Tj=125℃ VD=0.67* VDRM Rgk=220Ω SCR Fig.7: Relative variation of dV/dt immunity vs gatecathode resistance(typical values) (US108S) 1.00 80 100 120 140 160 180 200 220 Figure.8: Surge peak on-state current vs number of cycles. 100 90 80 70 60 50 40 30 20 10 0 ITSM(A) US108N Non repetitive Tj Iinitial=25℃ US108S Repetitive Tcase=110℃ Number of cycles 1 10 100 Fig.9:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp