UT110N03

UNISONIC TECHNOLOGIES CO., LTD UT110N03 N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8mΩ@VGS=10 V * RDS(ON) =7.0mΩ@VGS=4.5 V SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT110N03L-TA3-T UT110N03G-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw 1 of 4 QW-R502-367.A Copyright © 2009 Unisonic Technologies Co., Ltd UT110N03 ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 26 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 110 A Pulsed Drain Current (Note 2) IDM 440 A Single Pulsed Avalanche Current (Note 3) IAS 35 A Single Pulsed Avalanche Energy (Note 3) EAS 875 mJ Power Dissipation PD 100 W Junction Temperature TJ +175 °C Strong Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature 3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC MIN TYP MAX 62.5 1.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note1) Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS =0V, ID =250 µA VDS=26V,VGS =0 V VDS =0V, VGS =±20 V VDS =VGS, ID =250 µA VGS =10V, ID =50 A VGS =4.5V, ID =40 A MIN 26 1 ±100 1 3.9 5.2 9500 800 300 50 20.8 19 25.7 10 128 34 65 3 4.8 7.0 TYP MAX UNIT V µA nA V mΩ mΩ pF pF pF nC nC nC ns ns ns ns V A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS Output Capacitance COSS VDS =15V, VGS =0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS(Note 2) Total Gate Charge QG VDS =15V, VGS =5V, ID =16A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=15V, ID =1A, RGEN =6Ω Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) VGS =10 V Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20 A,VGS=0 V Drain-Source Diode Forward Current IS Notes: 1. Pulse Test: Pulse Width