UT138FE

UTC UT138FE TRIACS DESCRIPTION Glass passivated , sensitive gate triacs in a full plastic envelope, intended for use in general purpose bidirectional switching and phase control aplications, where high sensitivity is required in all four quadrants. TRIAC SYMBOL MT2 1 TO-220F G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS ( Tj=25°C) PARAMETER Repetitive Peak Off-State Voltages UT138FE-5 UT138FE-6 UT138FE-8 RMS On-state Current (Full sine wave; Ths≤56°C) VDRM 500* 600* 800 12 V SYMBOL RATING UNIT IT(RMS) A Non-repetitive Peak. On-State Current (Full sine wave, Tj=125°C prior to surge, with reapplied ITSM A VDRM(max) t=20ms 90 t=16.7ms 100 I2t For Fusing (t=10ms) I2t 40 A2s Repetitive Rate of Rise of On-state Current after Triggering (ITM=20A,IG=0.2A, dIG/dt=0.2A/µs) T2+ G+ 50 dIT/dt A/µs T2+ G50 T2- G50 T2- G+ 10 Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (over any 20 ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage Temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-019,B UTC UT138FE PARAMETER Repetitive paek voltage form all three terminals to external heatsink (R.H.≦65%,clean and dustfree) Capacitance from MT2 to external heatsink (f=1MHz) TRIAC SYMBOL Visol Cisol 12 ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25°C,unless otherwise specified) MIN TYP MAX 1500 UNIT V pF THERMAL RESISTANCES PARAMETER Thermal Resistance, Junction to heatsink (full or half cycle) with heatsink compound without heatsink compound Thermal Resistance, Junction to Ambient In free air SYMBOL Rthj-hs Rthj-a MIN TYP MAX 4.0 5.5 UNIT K/W K/W 55 STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER Gate Trigger Current IGT SYMBOL TEST CONDITIONS VD=12V, IT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT =0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A IT=15A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125°C VD=VDRM(max) , Tj=125°C MIN TYP 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.4 0.7 MAX UNIT 10 10 10 25 30 40 30 40 30 1.65 1.5 0.5 mA Latching Current IL mA Holding Current On-State Voltage Gate Trigger Voltage Off-state Leakage Current IH VT VGT ID mA V V V mA 0.25 0.4 0.1 DYNAMIC CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER Critical Rate Of Rise Of Off-State Voltage Gate Controlled Turn-on Time SYMBOL dVD/dt tgt TEST CONDITIONS VDM=67% VDRM(max), Tj=125°C Exponential waveform, Gate open circuit ITM=16A, VD=VDRM(max), IG=0.1A, dIG/dt=5A/µs MIN TYP MAX UNIT 50 2 V/µs µs UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-019,B UTC UT138FE TYPICAL CHARACTERISTICS Figure 1.Maximum on-state Dissipation.Ptot vs rms On-state Current,IT(RMS),Whereα=conduction Angle. 20 Ptot/W α 15 α Ths(max)/C α=180 α=120 α=90 α=60 α=30 45 15 Figure 4.Maximum Permissible RMS Current IT(RMS) vs heatsinkTemperature Ths IT(RMS)/A 56℃ 65 10 85 5 5 105 TRIAC 10 0 0 5 10 IT(RMS)/A 125 15 0 -50 0 50 Ths/℃ 100 150 1000 Figure 2. Maximum Permissible Non-repetitive Peak On-state Current ITSM,vs Pulse Width tp,for Sinusoidal Currents,tp≦20ms ITSM/A Figure 5.Maximum Permissible Repetitive rms on-state Current IT(RMS),vs Surge Duration,for Sinusoidal Currents,f=50Hz;Ths≦56℃ IT(RMS)/A 25 20 15 100 dIT/dt limit T2-G+ quadrant 10 10us 100us 1ms T/s IT T Tj initial=125℃max ITSM time 10 5 0 0.01 10ms 100ms 1 0.1 Surge Duration /S 10 100 80 Figure 3 .Maximum Permissible Non-Repetitive peak on-state Current ITSM,vs Number of Cycles, for Sinusoidal Currents,f=50Hz ITSM/A IT ITSM time T Tj initial=125℃max Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/ VGT(25℃),vs Junction Temperature Tj VGT(Tj) 1.6 VGT(25℃) 1.4 1.2 1 0.8 0.6 0.4 -50 0 50 Tj/℃ 100 150 60 40 20 0 1 10 100 1000 Number of Cycles at 50Hz UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-019,B UTC UT138FE Figure 7.Normalised Gate Trigger Current IGT(Tj)/IGT(25℃),vs Junction Temperature Tj IGT(Tj) IGT(25℃) T2+G+ T2+GT2-GT1-G+ Figure 10.Typical and Maximum On-state Characteristic IT/A 40 30 Tj=125℃ Tj=25℃ Vo=1.175V Rs=0.0316 Ohms 20 typ TRIAC 3 2.5 2 1.5 1 0.5 max 10 0 -50 0 50 Tj/℃ 100 150 0 0 0.5 1 1.5 VT/V 2 2.5 3 Figure 8.Normalised Latching Current IL(Tj)/IL(25℃),vs Junction Temperature Tj IL(Tj) IL(25℃) 10 Zth j-hs (K/W) Figure 11.Transient Thermal Impedance Zth j-hs,vs Pulse Width tp 3 2.5 2 with heatsink compound without heatsink compound 1 unidirectional bidirectional 0.1 1.5 1 0.5 0 -50 0 50 Tj/℃ Figure 9.Normalised Holding Current IH(Tj)/IH(25℃),vs Junction Temperature Tj 1000 100 150 0.001 10us 0.1ms 1ms 10ms tp/s 0.1s PD 0.01 t 1s 10s tp 3 2.5 2 1.5 1 0.5 IH(Tj) IH(25℃) Figure 12.Typical,critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj dV/dt(V/us) 100 10 0 -50 0 50 Tj/℃ 100 150 1 0 50 100 Tj/℃ 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-019,B UTC UT138FE TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-019,B