UT2301G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL  3.Drain 2.Gate 1.Source  ORDERING INFORMATION Ordering Number Note:  UT2301G-AE2-R UT2301G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 SOT-23 1 S S Pin Assignment 2 3 G D G D Packing Tape Reel Tape Reel S: Source MARKING 23AG www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-118.J UT2301  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID -2.8 A Pulsed Drain Current (Note 1, 2) IDM -10 A Total Power Dissipation PD 1.14 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Ambient (Note 3)  SYMBOL θJA RATING 110 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -20 Drain-Source Leakage Current IDSS VDS=-16V, VGS=0V Gate-Source Leakage Current IGSS VGS=±8V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.45 Static Drain-Source On-State Resistance VGS=-4.5V, ID=-2.8A RDS(ON) (Note 2) VGS=-2.5V, ID=-2.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-6V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDS=-6V, VGS=-4.5V, ID=-1A, RG=6Ω, RL=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-6V, VGS=-4.5V, Gate-Source Charge QGS ID=-2.8A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD VGS=0V, IS=-1.6A Maximum Continuous Drain-Source Diode IS Forward Current Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 95 122 MAX UNIT -1 ±100 V µA nA 130 190 V mΩ mΩ 447 127 80 pF pF pF 5 19 95 65 5.4 0.8 1.1 25 60 110 80 10 ns ns ns ns nC nC nC -0.8 -1.2 V -1.6 A 2 of 5 QW-R502-118.J UT2301 Power MOSFET TYPICAL CHARACTERISTICS Drain Source Current (A) Drain to Source Current (A)  On Resistance vs. Drain Current On Resistance vs. Gate-Source 0.5 0.4 On-Resistance (Ω) On-Resistance (Ω) 0.4 0.3 0.2 VGS=-2.5V 0.1 VGS=-4.5V ID=-2.8A 0.3 0.2 0.1 0 0 -4 -8 -6 Drain Current (A) -1 -10 -4 -2 -3 Gate to Source Voltage (V) -5 Source Current (A) Gate to Charge Voltage (V) -2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-118.J UT2301 Power MOSFET TYPICAL CHARACTERISTICS(Cont.)  Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.1 0.01 1 Pulse Duration (sec) Drain Current vs. Source to Drain Voltage -2 Drain-Source On-State Resistance Characteristics -6 -5 Drain Current, ID (A) Drain Current, ID (A) -1.5 -1 -0.5 -4 VGS=-4.5V, ID=-2.8A -3 -2 VGS=-2.5V ID=-2A -1 0 0 0 -300 -0.2 -0.4 -0.6 -0.8 Source to Drain Voltage, VSD (V) -1 Drain Current vs. Gate Threshold Voltage -500 Drain Current, IDSS (µA) Drain Current, ID (µA) -0.3 -0.4 -0.5 Drain Current vs. Drain-Source Breakdown Voltage -400 -200 -150 -100 -50 0 -0.2 Drain to Source Voltage, VDS (V) -250 0 -0.1 0 -350 -300 -250 -200 -150 -100 -50 -0.2 -0.4 -0.6 -0.8 Gate Threshold Voltage, VTH (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0 -10 -20 -30 -40 -50 Drain-Source Breakdown Voltage, BVDSS(V) 4 of 5 QW-R502-118.J UT2301 TYPICAL CHARACTERISTICS(Cont.) (o ds R Drain current, -ID (A) n) L im it  Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-118.J