UT2305G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.   SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R UT2305L-AL3-R UT2305G-AG3-R Note: Pin Assignment: G: Gate S: Source D: Drain  Package 1 G G D SOT-23-3 SOT-23 SOT-26 Pin Assignment 4 5 2 3 S D S D D G S D 6 D Packing Tape Reel Tape Reel Tape Reel MARKING SOT-23 / SOT-23-3 SOT-26 6 5 4 L: Lead Free G: Halogen Free 23E 1 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 2 3 1 of 4 QW-R502-133.H UT2305  Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 V Continuous Drain Current (Note 3) (TA=25°C) ID -4.2 A Pulsed Drain Current (Note 1, 2) IDM -10 A SOT-23-3 0.83 W Power Dissipation (TA=25°C) PD SOT-23 1.38 W SOT-26 1.1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER SYMBOL RATING SOT-23-3 150 Junction to Ambient (Note 3) θJA SOT-23 90 SOT-26 110 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Drain-Source On-State Resistance (Note 2) RDS(ON) TEST CONDITIONS MIN VGS=0V, ID=-250μA VDS=-20V, VGS=0V VGS=±12V, VDS=0V Reference to 25°C, ID=-1mA -20 VDS=VGS, ID=-250uA VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A -0.5 DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 2) QG VDS=-16V, VGS=-4.5V, Gate-Source Charge QGS ID=-4.2A Gate-Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) VDS=-15V, VGS=-10V, Turn-ON Rise Time tR ID=-1A, RG=6Ω, RD=15Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1.2A Reverse Recovery Time trr VGS=0V, IS=-4.2A, dI/dt=100A/μs Reverse Recovery Charge Qrr TYP MAX UNIT -1 ±100 V μA nA V/°C -1.2 53 65 100 250 V mΩ mΩ mΩ mΩ -0.1 900 116 120 pF pF pF 30 5 2.5 12 36 326 200 nC nC nC ns ns ns ns -1.2 27.7 22 V ns nC Notes: 1. Repetitive rating, pulse width limited by junction temperature. 2. Pulse width ≤300μs, duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-133.H UT2305 Power MOSFET TYPICAL CHARACTERISTICS Drain Current,-ID (A) Drain Current,-ID (A)  Typical Capacitance Characteristics Gate Charge Characteristics 10000 f=1.0MHZ ID=-4.2A VDS=-16V 10 CISS 1000 8 C (pF) Gate to Source Voltage,-VGS (V) 12 6 COSS 100 4 CRSS 2 10 0 0 5 10 15 20 25 Total Gate Charge,QG (nC) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 5 9 13 17 21 25 29 Drain-to-Source Voltage,-VDS (V) 3 of 4 QW-R502-133.H UT2305  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-133.H