UT2955G-AA3-R

UNISONIC TECHNOLOGIES CO., LTD UT2955 Power MOSFET SINGLE P-CHANNEL POWER MOSFET  DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies.  FEATURES * RDS(ON) < 170mΩ @ VGS=-10 V, ID=-0.75A * RDS(ON) < 180mΩ @ VGS=-10 V, ID=-1.5A * RDS(ON) < 185mΩ @ VGS=-10 V, ID=-2.4A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2955G-AA3-R UT2955L-TN3-R UT2955G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source  Package SOT-223 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel MARKING SOT-223 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-252 1 of 4 QW-R502-250.C UT2955  Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -1.7 A Pulsed Drain Current IDM -10.4 A Single Pulsed Avalanche Energy (Note 3) EAS 225 mJ SOT-223 1.0 W Power Dissipation PD TO-252 1.13 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. VDD=15V, VG=10V, IPK=6.7A, L=10mH, RG=25Ω  THERMAL DATA PARAMETER Junction to Ambient Junction to Case  SYMBOL SOT-223 TO-252 SOT-223 TO-252 θJA θJC RATINGS 150 110 14 4.53 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS (Note) Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL VGS=0V, ID=-250µA VDS=-60V, VGS=0V VDS=0V, VGS=±20V -60 VGS(TH) VDS=VGS, ID=-1.0mA VGS=-10V, ID=-0.75A VGS=-10V, ID=-1.5A VGS=-10V, ID=-2.4A -2.0 RDS(ON) VDS=-25V, VGS=0V, f=1MHz QG VDS=30V, VGS=10 V, ID=1.5A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDD=25V, ID=1.5A, RG=9.1Ω, RL=25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1.5A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, dIS /dt=100A/µs IS=1.5A Body Diode Reverse Recovery Charge QRR Note: Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN BVDSS IDSS IGSS CISS COSS CRSS Total Threshold TEST CONDITIONS TYP 145 150 154 MAX UNIT -1.0 ±100 V µA nA -4.0 170 180 185 V mΩ mΩ mΩ 492 165 50 pF pF pF 14.3 1.2 2.3 5.2 11 7.6 65 38 nC nC nC nC ns ns ns ns -1.10 -1.30 36 0.139 V ns nC 2 of 4 QW-R502-250.C UT2955 Power MOSFET TYPICAL CHARACTERISTICS  Drain Current vs. Gate Threshold Voltage 450 1200 Drain Current vs. Drain-Source Breakdown Voltage 400 1000 350 300 800 250 600 200 400 150 100 200 50 0 2 3 1 Gate Threshold Voltage, VTH (mV) 4 0 0 20 40 60 80 Drain-Source Breakdown Voltage, BVDSS(V) Drain Current, ID (A) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-250.C UT2955 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-250.C