UT3404G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3404 Power MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UT3404 is N-Channel enhancement mode power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL  3.Drain 2.Gate 1.Source  ORDERING INFORMATION Note:  Ordering Number Package UT3404G-AE3-R UT3404G-S08-R Pin Assignment: G: Gate SOT-23 SOP-8 S: Source D: Drain 1 S S 2 G S Pin Assignment 3 4 5 6 D S G D D 7 D 8 D Packing Tape Reel Tape Reel MARKING SOT-23 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd SOP-8 1 of 5 QW-R502-146.F UT3404  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Pulsed Drain Current (Note 1, 2) RATINGS UNIT 30 V ±20 V 5.8 A 20 A SOT-23 1.4 W Power Dissipation PD SOP-8 2 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VDSS VGSS ID IDM THERMAL DATA PARAMETER Junction to Ambient (Note 3)  SYMBOL SOT-23 SOP-8 RATINGS 85 62.5 θJA UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Drain-Source On-State Resistance (Note 2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250uA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) ID(ON) VDS=VGS, ID=250uA VGS=4.5V, VDS=5V VGS=10V, ID=5.8A VGS=4.5V, ID=5A 1 20 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) VDS=15V, VGS=10V, RG=3Ω, Turn-ON Rise Time tR RD=2.7Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=15V, VGS=10V, ID=5.8A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A Maximum Continuous Drain-Source Diode IS Forward Current Reverse Recovery Time tRR IF=5.8A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 V uA nA 1.9 3 22.5 34.5 28 43 680 102 77 820 pF pF pF 4.6 3.8 20.9 5 13.88 1.8 3.12 6.5 5.7 30 7.5 17 ns ns ns ns nC nC nC 0.76 1 V 2.5 A 21 10 ns nC 16.1 7.4 V A mΩ mΩ 2 of 5 QW-R502-146.F UT3404 Power MOSFET TYPICAL CHARACTERISTICS  Transfer Characteristics On-Region Characteristics 30 10V 6V VDS=5V 5V 4.5V 16 4V Drain Current,ID (A) 25 Drain Current,ID (A) 20 20 15 3.5V 10 VGS=3V 5 12 8 125℃ 4 25℃ 0 0 1 2 3 4 Drain to Source Voltage,VDS (V) 0 5 0.5 1 1.5 2 2.5 3 3.5 4 Gate to Source Voltage,VGS (V) 4.5 Drain to Source OnResistance,RDS(ON) (mΩ) Reverse Drain Current,IS (A) Normalized On-Resistance Drain to Source OnResistance,RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-146.F UT3404 TYPICAL CHARACTERISTICS(Cont.)  Gate-Charge Characteristics 10 VDS=15V ID=5.8A 8 f=1MHZ VGS=0V 900 800 6 4 700 CISS 600 500 400 300 200 2 COSS 100 0 2 6 4 8 10 Gate Charge,QG (nC) 12 14 0 Maximum Forward Biased Safe Operating Area 10 20 25 10 15 5 Drain to Source Voltage,VDS (V) RDS(ON) Limited TJ(Max)=150℃ TA=25℃ 30 1ms 10ms 1s 1 10s TJ(Max)=150℃ TA=25℃ 1 30 Single Pulse Power Rating Junctionto-Ambient 100μs 0.1s 0.1 0.1 40 10μs Power (W) 100 CRSS 0 0 Drain Current,ID (A) Capacitance Characteristics 1000 Capacitance (pF) Gate to Source Voltage,VGS (V) Power MOSFET 20 10 DC 0 10 100 1 0.1 10 Pulse Width (s) 100 1000 Normalized Transient Thermal Resistance,ZθJA Drain to Source Voltage,VDS (V) 0.001 0.01 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-146.F UT3404 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-146.F