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UT3N06G-AB3-R

UT3N06G-AB3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT89-3

  • 描述:

    MOS管 N-Channel VDS=60V VGS=±20V ID=3A Pd=690mW SOT89

  • 数据手册
  • 价格&库存
UT3N06G-AB3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * Simple drive requirement  SYMBOL Drain Gate Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3N06G-AB3-R UT3N06G-AE3-R UT3N06L-TM3-T UT3N06G-TM3-T UT3N06L-TN3-R UT3N06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source  Package SOT-89 SOT-23 TO-251 TO-252 Pin Assignment 1 2 3 G D S S G D G D S G D S Packing Tape Reel Tape Reel Tube Tape Reel MARKING SOT-89 SOT-23 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-251 / TO-252 1 of 4 QW-R502-366.G UT3N06  Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 3.0 A (VGS=4.5V, TA= 25°C) (Note 2) Pulsed Drain Current (Note 3, 4) IDM 10 A SOT-23 0.35 W Power Dissipation (TA= 25°C) SOT-89 PD 0.69 W TO-251/TO-252 1.13 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad 3. Pulse width limited by TJ(MAX) 4. Pulse width ≤300μs, duty cycle≤2%  THERMAL DATA PARAMETER SOT-23 Junction to Ambient SOT-89 TO-251/TO-252  SYMBOL RATING 350 180 110 θJA UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS ∆BVDSS ∆TJ Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage IDSS IGSS VGS(TH) Drain to Source On-state Resistance RDS(ON) TEST CONDITIONS VGS =0V, ID =250µA www.unisonic.com.tw TYP MAX UNIT 60 Reference to 25°C, ID=1mA V 0.05 VDS =60V,VGS =0V VGS =±20V VDS =VGS, ID =250µA VGS =10V, ID =3A VGS =4.5V, ID =2A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f =1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=30V, ID=1A, RD =30Ω, RG =3.3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge (Note) QG Gate Source Charge QGS VGS =4.5V, VDS =48V, ID =3A Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =1.2A, VGS =0V Reverse Recovery Time trr IS=3A,VGS=0V, dI/dt=100A/µs Reverse Recovery Charge QRR Note: Pulse width ≤300μs, duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD MIN 1.0 490 55 40 6 5 16 3 6 1.6 3 V/°C 10 ±100 µA nA 3.0 90 120 V mΩ mΩ 780 pF pF pF 42 58 10 1.2 25 26 ns ns ns ns nC nC nC V ns nC 2 of 4 QW-R502-366.G UT3N06  Power MOSFET TEST WAVEFORMS VG QG 4.5V QGS QGD Charge Switching Time Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q Gate Charge Waveform 3 of 4 QW-R502-366.G UT3N06 TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA)  Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-366.G
UT3N06G-AB3-R 价格&库存

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UT3N06G-AB3-R
    •  国内价格
    • 1+0.61990

    库存:0

    UT3N06G-AB3-R
      •  国内价格
      • 5+0.60847
      • 50+0.49031
      • 150+0.43124
      • 500+0.38694
      • 2500+0.35149
      • 4000+0.33377

      库存:0