UT3N10G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 2 1 SOT-23 1  DESCRIPTION TO-252 The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. (EIAJ SC-59) 1 1 SOT-89 SOT-223  FEATURES * RDS(ON) ≤ 0.165 Ω @ VGS =10V, ID =3.0A RDS(ON) ≤ 0.180 Ω @ VGS =4.5V, ID =2.0A * Simple drive requirement 6 5 4 1 1  SYMBOL 2 3 SOT-26 DFN3030-8 Drain Gate Source  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT3N10L-AA3-R UT3N10G-AA3-R SOT-223 UT3N10L-AB3-R UT3N10G-AB3-R SOT-89 UT3N10L-AE3-R UT3N10G-AE3-R SOT-23 UT3N10L-AG6-R UT3N10G-AG6-R SOT-26 UT3N10L-TN3-R UT3N10G-TN3-R TO-252 UT3N10L-K08-3030-R UT3N10G-K08-3030-R DFN3030-8 Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G D G S 2 D D S D D S Pin Assignment 3 4 5 6 7 S - - - S - - - D - - - G S D D S - - - S G D D D 8 D Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel (1) R: Tape Reel UT3N10G-AA3-R (1)Packing Type (2)Package Type (3)Green Package (2) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23 AG6: SOT-26, TN3: TO-252 K08-3030: DFN3030-8 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-859.K UT3N10  Power MOSFET MARKING SOT-223 SOT-89 L: Lead Free G: Halogen Free Date Code UT3N10 UT3N10 1 1 SOT-23 L: Lead Free G: Halogen Free TO-252 Lot Code 4 3N10 1 UTC UT3N10 L: Lead Free G: Halogen Free SOT-26 6 5 3N10 Date Code 2 L: Lead Free G: Halogen Free 3 DFN3030-8 L: Lead Free G: Halogen Free Date Code 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UT 3N10 Date Code 2 of 8 QW-R502-859.K UT3N10  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (VGS=4.5V, TA= 25°C) (Note 2) Pulsed Drain Current (Note 3, 4) Power Dissipation (TA= 25°C) SOT-223 SOT-89 SOT-23 SOT-26 TO-252 DFN3030-8 SYMBOL VDSS VGSS RATINGS 100 ±20 UNIT V V ID 3.0 A IDM 10 0.89 0.55 A W W PD 0.35 W 2 W 0.96 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2 2. Surface mounted on 1 in copper pad of FR4 board; 270°C/W when mounted on min. copper pad. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. 4. Pulse width ≤300μs, duty cycle≤2%.  THERMAL DATA PARAMETER SYMBOL RATING SOT-223 140 SOT-89 180 SOT-23 Junction to Ambient (Note) θJA 350 SOT-26 TO-252 62.5 DFN3030-8 130 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W °C/W °C/W °C/W 3 of 8 QW-R502-859.K UT3N10  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain to Source On-state Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =250µA VDS =100V,VGS =0V VGS =±20V 100 VGS(TH) VDS =VGS, ID =250µA VGS =10V, ID =3.0A VGS =4.5V, ID =2.0A 1.0 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f =1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note) QG Gate Source Charge QGS VGS =10V, VDS=80V, ID =3A Gate Drain Charge QGD Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=50V, ID=3A, RG =25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =1.2A, VGS =0V Reverse Recovery Time trr IS=3A,VGS=0V, dI/dt=100A/µs Reverse Recovery Charge Qrr Note: Pulse width ≤300μs, duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 ±100 V µA nA 3.0 0.165 0.180 V Ω Ω 720 45 36 pF pF pF 20 3.2 4.2 8 18 75 30 nC nC nC ns ns ns ns 1.2 50 140 V ns nC 4 of 8 QW-R502-859.K UT3N10  Power MOSFET TEST WAVEFORMS VG VDS 90% QG 4.5V QGS QGD 90% VGS tD(ON) tR tD(OFF) tF Switching Time Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Charge Q Gate Charge Waveform 5 of 8 QW-R502-859.K UT3N10 TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Voltage VGS=5~10V 4V Drain Current, ID (A) 5 4 3 3.5V 2 Note: 1.TA=25°C 2.Pulse test 1 0 0 0.5 1 3V 1.5 2 2.5 Drain-Source On-Resistance vs. Gate-Source Voltage 2 Note: 1.TA=25°C 2.Pulse test Drain-Source On-Resistance, RDS(ON) (Ω) 6 1.5 1 ID=1.5A 0 3 2 2.5 3 3.5 4 4.5 5 Gate-Source Voltage, VGS (V) Capacitance Characteristics Gate Charge Characteristics 10000 12 VDS=80V VGS=10V ID=3A Pulsed 10 Capacitance, C (pF) Gate-Source Voltage, VGS (V) 3A 0.5 Drain-Source Voltage, VDS (V) 8 6 4 1000 CISS 100 COSS 2 CRSS 10 0 0 0.5 4 8 12 16 0 20 10 20 30 40 50 Total Gate Charge, QG (nC) Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature 1.4 VGS=10V ID=1.5A Pulsed Drain-Source Breakdown Voltage Normalized Drain-Source On-Resistance, RDS(ON) (Ω)  Power MOSFET 0.4 0.3 0.2 ID=0.25mA Pulsed 1.2 1 0.8 0.1 25 50 75 100 125 150 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 50 75 100 125 150 Junction Temperature, TJ (°C) 6 of 8 QW-R502-859.K UT3N10 TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature 10 2 1.8 1.6 1.4 TA=150°C 25°C 1 0.1 25 3 50 75 100 125 Drain Current vs. Gate-Source Voltage Drain-Source On-Resistance vs. Drain Current 180 1 Drain-Source On-Resistance, RDS(ON) (mΩ) 2 3 4 5 170 160 150 140 130 6 TA=25°C VGS=10V Pulsed 0 1 2 3 4 5 6 7 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Power Dissipation vs. Junction Temperature 0.4 1.1 Source-Drain Voltage, VSD (V) 1 0 1 Junction Temperature, TJ (°C) 2 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 150 TA=25°C Pulsed Drain Current, ID (A) Source Current vs. Source-Drain Voltage ID=0.25mA Pulsed Source Current, IS (A) Gate Threshold Voltage, VGS(TH) (V) 2.2 4.5 SOT-23 Drain Current vs. Junction Temperature 0.35 0.3 Drain Current, ID (A) Power Dissipation, PD (W)  Power MOSFET 0.25 0.2 0.15 0.1 3 1.5 0.05 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 7 of 8 QW-R502-859.K UT3N10  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Safe Operating Area Drain Current, ID (A) 10 MAX 100us 1 1ms 0.1 Operation in this area is limited by RDS(ON) 10ms SOT-23 TJ=150°C TC=25°C Single Pulse 0.01 0.1 1 DC 10 100 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-859.K