UT3P01Z

UT3P01Z

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    UT3P01Z - P CHANNEL POWER MOSFET - Unisonic Technologies

  • 数据手册
  • 价格&库存
UT3P01Z 数据手册
UNISONIC TECHNOLOGIES CO., LTD UT3P01Z P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS (ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. Power MOSFET FEATURES * RDS(ON) = 8Ω @VGS = -4 V * Ultra low gate charge ( typical 1.43 nC ) * Low reverse transfer capacitance ( CRSS = typical 1.8 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness * Halogen Free SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number UT3P01ZG-AL3-R UT3P01ZG-AN3-R Package SOT-323 SOT-523 1 S S Pin Assignment 2 G G 3 D D Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-341..A UT3P01Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS Power MOSFET RATINGS UNIT V -30 V ±10 DC A -0.1 Drain Current ID Pulse(Note 2) A -0.4 Power Dissipation PD 150 mW Storage Temperature TSTG °C -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≤10μs, Duty cycle≤1% ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Cutoff Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL BVDSS IDSS IGSS VGS(OFF) RDS(ON) gFS CISS COSS CRSS TEST CONDITIONS VGS=0V, ID=-1mA VDS=-30V,VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100µA VGS=-4V, ID=-50mA VGS=-2.5V, ID=-30mA VGS=-1.5V, ID=-1mA VDS=-10V, ID=-50mA MIN -30 -1 ±10 -0.4 8 11 27 110 7.5 5.7 1.8 1.43 0.18 0.25 24 55 120 130 -0.83 -1.2 -1.4 10.4 15.4 54 TYP MAX UNIT V µA µA V Ω Ω Ω mS pF pF pF nC nC nC ns ns ns ns V 80 VDS=-10V, VGS=0 V, f=1.0MHz QG VDS=-10V, VGS=-10V, Gate Source Charge QGS ID=-100mA Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR See specified Test Circuit Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-100mA, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-341..A UT3P01Z SWITCHING TIME TEST CIRCUIT VOUT VIN G 0V -4V RG=50Ω Power MOSFET D RL=300 Ω ID=-50mA VDD=-15V D.U.T. S Pulse Width= 10μs Duty cycle≤1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-341..A UT3P01Z TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Power MOSFET 2.0 1.6 300 250 Drain Current, ID (µA) 200 150 100 50 0 Drain Current vs. Gate Threshold Voltage Drain Current, ID (mA) 1.2 0.8 0.4 0 0 5 10 15 20 25 30 35 40 45 50 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 120 Drain Current, ID (mA) 100 80 60 40 20 0 Drain Current, ID (mA) 40 30 20 10 0 VGS=-4V ID=50mA VGS=-2.5V ID=-30mA VGS=-1.5V ID=-1mA 0 20 40 60 80 100 120 140 160 180 200 Drain to Source Voltage, VDS (mV) 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) 1.2 U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-341..A
UT3P01Z 价格&库存

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