UTC 8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to UTC 8550S 1: EMITTER 2: COLLECTOR
TO-92
3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25℃) Collector Current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
VALUE
30 20 5 1 700 150 -65 ~ +150
UNIT
V V V W mA °C °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note)
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob
TEST CONDITIONS
Ic=100µA,IE=0 Ic=1mA,IB=0 IE=100µA,Ic=0 VCB=30V,IE=0 VEB=5V,Ic=0 VCE=1V,Ic=1mA VCE=1V,Ic=150 mA VCE=1V,Ic=500mA Ic=500mA,IB=50mA Ic=500mA,IB=50mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz
MIN
30 20 5
TYP
MAX
UNIT
V V V uA nA
1 100 100 120 40 110 400 0.5 1.2 1.0 100 9.0
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
V V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
1
QW-R201-011,A
UTC 8050S
RANK RANGE
NPN EPITAXIAL SILICON TRANSISTOR
C 120-200 D 160-300 E 280-400
CLASSIFICATION OF hFE2
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
0.5
Fig.2 DC current Gain
3 10 2 10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
IB=3.0mA
Ic,Collector current (mA)
0.4
IB=2.0mA
0.3
HFE, DC current Gain
IB=2.5mA
VCE=1V
2 10
VCE=1V
1 10
IB=1.5mA IB=1.0mA IB=0.5mA
0.2
1 10
0 10
0.1
0 0 0.4 0.8 1.2 1.6 2.0
0 10
-1 10
0 10
1 10
2 10
3 10
-1 10 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4 10 3 10
Fig.5 Current gain-bandwidth product
Current Gain-bandwidth T product,f(MHz)
VCE=10V
2 10
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
3 10
Saturation voltage (mV)
Ic=10*IB VBE(sat)
3 10
2 10
f=1MHz IE=0
2 10
1 10
1 10
VCE(sat)
1 10
-1 10
0 10
1 10
2 10
3 10
0 10 0 10
1 10
2 10
3 10
0 10
0 10
1 10
2 10
3 10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
2
QW-R201-011,A
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