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UTCHE8050

UTCHE8050

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    UTCHE8050 - NPN EPITAXIAL SILICON TRANSISTOR - Unisonic Technologies

  • 数据手册
  • 价格&库存
UTCHE8050 数据手册
UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *complimentary to UTC HE8550 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25°C) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG VALUE 40 25 6 1 1.5 150 -65 ~ +150 UNIT V V V W A °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob Test conditions Ic=100µA,IE=0 Ic=2mA,IB=0 IE=100µA,Ic=0 VCB=35V,IE=0 VEB=6V,Ic=0 VCE=1V,Ic=5mA VCE=1V,Ic=100mA VCE=1V,Ic=800mA Ic=800mA,IB=80mA Ic=800mA,IB=80mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz MIN 40 25 6 TYP MAX UNIT V V V nA nA 100 100 45 85 40 135 160 110 500 0.5 1.2 1.0 100 9.0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance V V V MHz pF UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-009,A UTC HE8050 RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR C 120-200 D 160-300 E 250-500 CLASSIFICATION OF hFE TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics 0.5 Fig.2 DC current Gain 3 10 3 10 Fig.3 Base-Emitter on Voltage IB=3.0mA IB=2.5mA IB=2.0mA Ic,Collector current (mA) Ic,Collector current (mA) VCE=1V HFE, DC current Gain 0.4 VCE=1V 2 10 2 10 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 1 10 1 10 0.1 0 0 0.4 0.8 1.2 1.6 2.0 0 10 -1 10 0 10 1 10 2 10 3 10 0 10 0.2 0.4 0.6 0.8 1.0 1.2 Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 4 10 3 10 Fig.5 Current gain-bandwidth product 3 10 Fig.6 Collector output Capacitance Cob,Capacitance (pF) Ic=10*IB VBE(sat) 3 10 Current Gain-bandwidth product,fT(MHz) Saturation voltage (mV) VCE=10V 2 10 2 10 f=1MHz IE=0 2 10 1 10 1 10 VCE(sat) 1 10 -1 10 0 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 10 0 10 0 10 1 10 2 10 3 10 Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-009,A
UTCHE8050 价格&库存

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