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UTCHE8550

UTCHE8550

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    UTCHE8550 - PNP EPITAXIAL SILIC ON TRANSISTOR - Unisonic Technologies

  • 数据手册
  • 价格&库存
UTCHE8550 数据手册
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8050 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25℃) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG VALUE -40 -25 -6 1 -1.5 150 -65 ~ +150 UNIT V V V W A °C °C ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob TEST CONDITIONS Ic=-100µA,IE=0 Ic=-2mA,IB=0 IE=-100µA,Ic=0 VCB=-35V,IE=0 VEB=-6V,Ic=0 VCE=-1V,Ic=-5mA VCE=-1V,Ic=-100mA VCE=-1V,Ic=-800mA Ic=-800mA,IB=-80mA Ic=-800mA,IB=-80mA VCE=-1V,Ic=-10mA VCE=-10V,Ic=-50mA VCB=-10V,IE=0 f=1MHz MIN -40 -25 -6 TYP MAX UNIT V V V nA nA -100 -100 45 85 40 170 160 80 -0.28 -0.98 -0.66 190 9.0 500 -0.5 -1.2 -1.0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance 100 V V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-010,A UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE C 120-200 D 160-300 E 250-500 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics -0.5 3 10 Fig.2 DC current Gain 3 -10 Fig.3 Base-Emitter on Voltage Ic,Collector current (mA) Ic,Collector current (mA) VCE=-1V IB=-3.0mA -0.3 HFE, DC current Gain -0.4 VCE=-1V 2 -10 2 10 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA 1 10 1 -10 -0.1 IB=-0.5mA 0 -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage 4 -10 3 10 Fig.5 Current gain-bandwidth product 3 10 Fig.6 Collector output Capacitance Cob,Capacitance (pF) Ic=10*IB Current Gain-bandwidth product,fT(MHz) Saturation voltage (mV) VCE=-10V 2 10 3 -10 VBE(sat) 2 10 f=1MHz IE=0 2 -10 1 10 1 10 VCE(sat) 1 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 0 10 0 -10 1 -10 2 -10 3 -10 0 10 0 -10 1 -10 2 -10 3 -10 Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-010,A
UTCHE8550 价格&库存

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