UTD408L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTD408 Power MOSFET N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS(ON) = 18mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTD408L-TN3-R UTD408G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source  Pin Assignment 1 2 3 G D S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-184.C UTD408  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TC=25°C) (Note 4) ID 18 A Pulsed Drain Current (Note 3) IDM 40 A Avalanche Current (Note 3) IAR 18 A Repetitive Avalanche Energy (L=0.1mH) (Note 3) EAR 40 mJ TA=25°C (Note 1) 2.5 W Power Dissipation PD TC=25°C (Note 2) 60 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient (Note 1) θJA 50 °C/W Junction to Case (Note 3) θJC 2.08 °C/W Notes: 1.The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, and the maximum temperature of 150°C may be used if the PCB or heat-sink allows it. 2. The power dissipation PD is based on TJ(MAX)= 150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heat-sinking is used. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)= 150°C. 4. The maximum current rating is limited by bond-wires. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-184.C UTD408  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250µA VDS =24V, VGS =0 V VDS =0 V, VGS = ±20V 30 VGS(TH) ID(ON) VDS =VGS, ID =250 µA VDS =5V, VGS =4.5V VGS =10V, ID =18A VGS =4.5V, ID =10A 1 40 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =15V, VGS =10V, ID =18A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V,VDS=15V,RL=0.82Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source IS Diode Forward Current Drain-Source Diode Forward Voltage VSD IS=1A,VGS=0V Body Diode Reverse Recovery Time tRR IF=18 A, dI/dt=100A/μs Body Diode Reverse Recovery QRR IF=18 A, dI/dt=100A/μs Charge Notes: 5. Pulse width limited by TJ(MAX) 6. Pulse width ≤300us, duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 100 V µA nA 1.8 2.5 13.6 20.6 18 27 1040 180 110 1250 pF pF pF 19.8 2.5 3.5 4.5 3.9 17.4 3.2 25 nC nC nC ns ns ns ns 18 A 1 25 V ns 0.75 19 8 V A mΩ mΩ nC 3 of 6 QW-R502-184.C UTD408 Drain Current,ID (A) TYPICAL CHARACTERISTICS Drain Current,ID (A)  Power MOSFET 24 On-Resistance vs. Drain Current and Gate Voltage 1.6 ID=18A VGS=4.5V 22 On-Resistance vs. Junction Temperature VGS=10V 1.4 20 VGS=4.5V 18 1.2 16 VGS=10V 14 1 12 10 0 50 5 10 15 Drain Current,ID (A) 20 On-Resistance vs. Gate-Source Voltage ID=18A 0.8 0 1.0E+01 25 50 75 100 125 150 Junction Temperature (℃) 175 Body-Diode Characteristics 1.0E+00 40 1.0E-01 30 125℃ 1.0E-02 25℃ 125℃ 1.0E-03 20 10 2 25℃ 8 4 6 Gate to Source Voltage,VGS (V) 1.0E-04 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Body Diode Forward Voltage,VSD (V) 4 of 6 QW-R502-184.C UTD408 TYPICAL CHARACTERISTICS (Cont.) Normalized Transient Thermal Resistance,ZθJA Power (W) Drain Current,ID (A) Capacitance (pF) Gate to Source Voltage,VGS (V)  Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-184.C UTD408  Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-184.C