MMBT2907A

MMBT2907A New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View Mounting Pad Layout 0.031 (0.8) Pin Configuration 1 = Base 2 = Emitter 3 = Collector 1 2 max. .004 (0.1) 0.035 (0.9) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) 0.037 (0.95) 0.037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2F Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box Ratings at 25°C ambient temperature unless otherwise specified. Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation(1) Power Dissipation(2) Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Notes: (1) FR-5 Board = 1.0 x 0.75 x 0.062 in. (2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol –VCEO –VCBO –VEBO –IC TA = 25°C Derate above 25°C TA = 25°C Derate above 25°C FR-5 Board Alumina Substrate Ptot Ptot RΘJA Tj TS Value 60 60 5.0 600 225 1.8 300 2.4 556 417 150 – 55 to +150 Unit V V V mA mW mW/°C mW mW/°C °C/W °C °C Document Number 88223 10-May-02 www.vishay.com 1 MMBT2907A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition –VCE = 10V, – IC = 0.1mA –VCE = 10V, – IC = 1mA –VCE = 10V, – IC = 10mA –VCE = 10V, – IC = 150mA(1) –VCE = 10V, – IC = 500mA(1) –VEB = 0.5V, –VCE = 30V –VCB = 50V, IE = 0 –VCB = 50V,IE = 0,TA =125°C –VEB = 0.5V, –VCE = 30V – IC = 150mA, – IB = 15mA – IC = 500mA, – IB = 50mA – IC = 150mA, – IB = 15mA – IC = 500mA, – IB = 50mA – IC = 10mA, IB = 0 – IC = 10µA, IE = 0 – IE = 10µA, IC = 0 –VCE = 20V, – IC = 50mA f = 100MHz –VCB = 10V, f = 1.0MHz IE = 0 –VEB = 2.0V, f = 1.0MHz IC = 0 Min 75 100 100 100 50 — — — — — — — — 60 60 5.0 200 — — Typ — — — — — — — — — — — — — — — — — — — Max — — — 300 — 50 0.01 10 50 0.4 1.6 1.3 2.6 — — — — 8 30 Unit DC Current Gain hFE — Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector-Emitter Breakdown Voltage(1) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product Output Capacitance Input Capacitance Note: (1) Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2.0% –ICEV –ICBO –IBL –VCEsat –VBEsat –V(BR)CEO –V(BR)CBO –V(BR)EBO fT Cobo Cibo nA µA nA V V V V V MHz pF pF www.vishay.com 2 Document Number 88223 10-May-02 MMBT2907A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter Turn-ON Time Delay Time Rise Time Turn-OFF Time Storage Time Fall Time J = 25°C unless otherwise noted) Symbol ton td tr toff ts tf Test Condition –IB1 = 15mA, –IC = 150mA –VCC = 30V – IB1 = 15mA, – IC = 150mA –VCC = 30V – IB1 = 15mA, – IC = 150mA –VCC = 30V – IB1 = 15mA, – IC = 150mA –VCC = 6.0V – IB1 = – IB2 = 15mA –IC = 150mA , –VCC = 6.0V – IB1 = – IB2 = 15mA – IC = 150mA , –VCC = 6V Min — — — — — — Typ — — — — — — Max 45 10 40 100 80 30 Unit ns ns ns ns ns ns Switching Time Equivalent Test Circuit Figure 1 - Delay and Rise Time Test Circuit -30V INPUT Zo = 50 Ω PRF = 150 PPS Rise Time ≤ 2.0 ns P.W. < 200 ns 0 -16 V 200ns 200 Ω INPUT Zo = 50 Ω PRF = 150 PPS Rise Time ≤ 2.0 ns P.W. < 200 ns 0 -30 V 200ns 50 Ω Figure 2 - Storage and Fall Time Test Circuit +15 V 1.0 k Ω 1.0 k Ω To Oscilloscope with Rise Time ≤ 5.0 ns -6.0 V 37 Ω 1.0 k Ω To Oscilloscope with Rise Time ≤ 5.0 ns 50 Ω Document Number 88223 10-May-02 www.vishay.com 3