MMBT4403

MMBT4403 New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View Mounting Pad Layout 0.031 (0.8) Pin Configuration 1 = Base 2 = Emitter 3 = Collector 1 2 max. .004 (0.1) 0.035 (0.9) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) 0.037 (0.95) 0.037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case with the type designation 2N4403. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2T Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box Ratings at 25°C ambient temperature unless otherwise specified. Maximum Ratings & Thermal Characteristics Parameters Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation(1) Power Dissipation(2) TA = 25°C Derate above 25°C TA = 25°C Derate above 25°C Symbols –VCBO –VCEO –VEBO – IC Ptot Ptot RθJA Tj TS Value 40 40 5.0 600 225 1.8 300 2.4 556(1) 417(2) 150 – 55 to +150 Units V V V mA mW mW/°C mW mW/°C °C/W °C °C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Notes: (1) FR-5 Board = 1.0 x 0.75 x 0.062 in. (2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Document Number 88227 10-May-02 www.vishay.com 1 MMBT4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition –VCE = 1V, – IC = 0.1mA –VCE = 1V, – IC = 1mA –VCE = 1V, – IC = 10mA –VCE = 2V, – IC = 150mA(1) –VCE = 2V, – IC = 500mA(1) – IC = 0.1mA, IE = 0 – IC = 1mA, IB = 0 – IE = 0.1mA, IC = 0 – IC = 150mA, – IB = 15mA – IC = 500mA, – IB = 50mA – IC = 150mA, – IB = 15mA – IC = 500mA, – IB = 50mA –VEB = 0.4V, –VCE = 35V –VEB = 0.4V, –VCE = 35V –VCE = 10V, – IC = 20mA f = 100MHz –VCB = 10V, IE = 0, f = 1MHz –VEB = 0.5V, IC = 0, f = 1MHz –VCE = 10V, – IC = 1mA, f = 1kHz –VCE = 10V, – IC = 1mA, f = 1kHz –VCE = 10V, – IC = 1mA, f = 1kHz –VCE = 10V, – IC = 1mA, f = 1kHz Min 30 60 100 100 20 40 40 5.0 — — 0.75 — — — 200 — — 1.5 60 0.1 • 10-4 1.0 Typ — — — — — — — — — — — — — — — — — — — — — Max — — — 300 — — — — 0.40 0.75 0.95 1.30 100 100 — 8.5 30 15 500 8 • 10-4 100 Unit DC Current Gain hFE — Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector-Emitter Cut-off Current Emitter-Base Cut-off Current Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Small Signal Current Gain Voltage Feedback Ratio Output Admittance (1) –V(BR)CBO –V(BR)CEO –V(BR)EBO –VCEsat –VBEsat – ICEV – IBEV fT CCBO CEBO hie hfe hre hoe V V V V V nA nA MHz pF pF kΩ — — µS Notes: (1) Pulse test: pulse width ≤ 300 µs duty cycle ≤ 2% www.vishay.com 2 Document Number 88227 10-May-02 MMBT4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter Delay Time (see Fig. 1) Rise Time (see Fig. 1) Storage Time (see Fig. 2) Fall Time (see Fig. 2) J = 25°C unless otherwise noted) Symbol td tr ts tf Test Condition – IB1 = 15mA, – IC = 150mA –VCC = 30V, –VEB = 2V – IB1 = 15mA, – IC = 150mA –VCC = 30V, –VEB = 2V – IB1 = – IB2 = 15mA, – IC = 150mA, –VCC = 30V – IB1 = – IB2 = 15mA, – IC = 150mA, –VCC = 30V Min — — — — Typ — — — — Max 15 20 225 30 Unit ns ns ns ns Switching Time Equivalent Test Circuit Figure 1: Turn-ON Time 1.0 to 100 µs, DUTY CYCLE ≈ 2% +16 V 0 -2 V < 2 ns 1kΩ C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +30V 200Ω +16 V 0 -14 V < 20 ns -4 V 1kΩ C S* < 10 pF Figure 2: Turn-OFF Time 1.0 to 100 µs, DUTY CYCLE ≈ 2% +30V 200Ω Document Number 88227 10-May-02 www.vishay.com 3