PI5101-01-LGIZ

End of Life μRDS(on) FET™ Series PI5101-01-LGIZ 360μΩ, 5 V/60 A N-Channel MOSFET Product Description Features The PI5101μRDS(on) FET™ solution combines a highperformance 5 V, 360 μΩ lateral N-Channel MOSFET with a thermally enhanced high density 4.1mm x 8mm x 2mm land-grid-array (LGA) package to enable world class performance in the footprint area of an industry standard SO-8 package. The PI5101 offers unprecedented figure-ofmerits for DC & switching applications. The PI5101 will replace up to 6 conventional “SO-8 form factor” devices for the same on-state resistance, reducing board space by ~80%. The PI5101 offers unprecedented figure-of-merit for RDS(on) x QG, gate resistance (RG) and package inductance (LDS) outperforming conventional Trench MOSFETs and enabling very low loss operation. • Ultra Low “micro-Ohm” RDS(on) The PI5101 LGA package is fully compatible with industry standard SMT assembly processes. • Extremely Low Gate Charge • Very Low Gate Resistance • High Density, Low Profile • Very Low Package Inductance • Low Thermal Resistance Applications • Power Path Management Solutions • Active ORing & Load Switches • High Current DC-DC Converters Product Summary Package Information Symbol Condition ID TA = 25°C 60 ADC Max V(BR)DSS ID = 5 mA 5V 360 μΩ Min 380 μΩ Typ 65 nC Typ RG 0.1 Ω Typ LDS 0.1 nH Typ RDS(ON) QG VGS = 4.5 V VGS = 3.5 V VGS = 4.5 V μRDS(on) FET™ Series Page 1 of 10 Value • 4.1mm x 8mm x 2mm Thermally Enhanced LGA Typ Rev 1.0 vicorpower.com 01/2014 800 927.9474 PI5101-01-LGIZ End of Life Order Information Part Number Package Transport Media PI5101-01-LGIZ 4.1mm x 8mm x 2mm 3-Lead LGA T&R Maximum Rating and Thermal Characteristics TA = 25°C unless otherwise specified. Parameter Symbol Limit Unit Drain-to-Source Voltage VDS 5 V Gate-to-Source Voltage VGS ±5 V ID 60 A IDM 150 A IAS 100 A 3.1 W 2 W TJ, TSTG -55 to 150 °C RθJ-A 40 °C/W 6 °C/W 260 °C Continuous Drain Current Pulsed TAV