1.5KA13A

1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • 1500 W peak pulse power capability with a 10/1000 µs waveform Case Style 1.5KA PRIMARY CHARACTERISTICS VBR PPPM PD IFSM TJ max. 6.8 V to 47 V 1500 W 6.5 W 200 A 185 °C • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1) (fig. 1) Peak pulse current at TA = 25 °C with a 10/1000 µs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) Peak forward surge current 8.3 ms single half sine-wave (2) Maximum instantaneous forward voltage at 100 A Operating junction and storage temperature range Notes (1) (2) (2) SYMBOL PPPM IPPM PD IFSM VF TJ, TSTG LIMIT 1500 See next table 6.5 200 3.5 - 65 to + 185 UNIT W A W A V °C Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum Document Number: 88300 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE DEVICE TYPE VBR (1) AT IT (V) MIN. 1.5KA6.8 1.5KA6.8A 1.5KA7.5 1.5KA7.5A 1.5KA8.2 1.5KA8.2A 1.5KA9.1 1.5KA9.1A 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A 1.5KA22 1.5KA22A 1.5KA24 1.5KA24A 1.5KA27 1.5KA27A 1.5KA30 1.5KA30A 1.5KA33 1.5KA33A 1.5KA36 1.5KA36A 1.5KA39 1.5KA39A 1.5KA43 1.5KA43A 1.5KA47 1.5KA47A Notes (1) (2) MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.3 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 MAXIMUM TEST STAND-OFF REVERSE CURRENT VOLTAGE LEAKAGE IT VWM AT VWM (V) (mA) ID (µA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 1000 1000 500 500 200 200 50 50 20 20 5.0 5.0 2.0 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 10 000 10 000 5000 5000 2000 2000 500 500 200 200 50 50 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 20 20 20 PEAK PULSE CURRENT IPPM (2) (A) 139 143 128 133 120 124 109 112 100 103 92.6 96.2 86.7 89.8 78.9 82.4 68.2 70.8 63.8 66.7 56.6 59.5 51.5 54.2 47.0 49.0 43.2 45.2 38.4 40.0 34.5 36.2 31.4 32.8 28.8 30.1 26.6 27.8 24.2 25.3 22.1 23.1 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 MAXIMUM TEMP. COEFFICIENT OF VBR (%/°C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.076 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 VBR measured after IT applied for 300 µs = square wave pulse or equivalent Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88300 Revision: 09-Feb-11 1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N 1.5KA6.8AHE3/54 Note (1) (1) UNIT WEIGHT (g) 0.916 PREFERRED PACKAGE CODE 54 BASE QUANTITY 1400 DELIVERY MODE 13" diameter paper tape and reel AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 1.0 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 20 000 75 50 CJ - Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Zero Bias 1000 Measured at Stand-Off Voltage VWM 25 0 0 25 50 75 100 125 150 175 200 100 1.0 10 100 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance Unidirectional Document Number: 88300 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor IFSM - Peak Forward Surge Current (A) 100 60 Hz Resistive or Inductive Load 75 200 TL = 75 °C 8.3 ms Single Half Sine-Wave 100 PD - Power Dissipation (%) 50 L = 0.375" (9.5 mm) Lead Lengths 25 0 0 25 50 75 100 125 150 175 200 10 1 10 100 TL - Lead Temperature (°C) Number of Cycles at 60 Hz Figure 5. Power Derating Curve Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KA 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88300 Revision: 09-Feb-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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