1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional V(BR) Bidirectional PPPM PD IFSM (Unidirectional only) Tj max. 6.8 V to 540 V 6.8 v to 440 V 1500 W 6.5 W 200 A 175 °C
Case Style 1.5KE
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: For unidirectional types the color band denotes cathode end, no marking on bidirectional types
DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional types, (e.g. 1.5KE440CA). use C or CA suffix
Electrical characteristics apply in both directions.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1) Peak pulse current with a 10/1000 µs waveform (1) SYMBOL PPPM IPPM PD
(2)
LIMIT 1500 see next table 6.5 200 3.5/5.0 - 55 to + 175
UNIT W A W A V °C
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) Peak forward surge current 8.3 ms single half sine-wave unidirectional only Maximum instantaneous forward voltage at 100 A for unidirectional only Operating junction and storage temperature range
(3)
IFSM VF TJ, TSTG
Document Number 88301 20-Jun-06
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1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
(1) VF NOTE:= 3 .5 V FOR 1.5KE220 (A) PULSE, PER F = 5.0 AND DERATED ABOVE ABOVE °C PER FIG. 2 (3) MEASURED ON 8.3 MS SINGLE HALF SINE-WAVE FOR 1.5KE250(A) & TA = WAVE, DUTY CYCLE = 4 PULSES PER MINUTE MAXIMUM (2) NON-REPETITIVE CURRENT & BELOW; V FIG. 3 VOR EQUIVALENT SQUARE 25
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
JEDEC TYPE NUMBER 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N6272 1N6272A 1N6273 1N6273A 1N6274 1N6274A 1N6275 1N6275A 1N6276 1N6276A 1N6277 1N6277A 1N6278 1N6278A 1N6279 1N6279A 1N6280 1N6280A 1N6281 1N6281A 1N6282 1N6282A 1N6283 1N6283A 1N6284 1N6284A 1N6285 1N6285A 1N6286 1N6286A 1N6287 1N6287A 1N6288 1N6288A 1N6289 1N6289A 1N6290 1N6290A 1N6291 1N6291A 1N6292 1N6292A www.vishay.com 2 GENERAL SEMICONDUCTOR PART NUMBER
(+)
BREAKDOWN VOLTAGE V(BR) AT IT (1) (V) MIN MAX 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.8 58.8 68.2 65.1 74.8 71.4 82.5 78.8 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3
TEST CURRENT IT (mA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
STAND-OFF VOLTAGE VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1
MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (µA) 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 139 143 128 133 120 124 109 112 100 103 92.6 96.2 86.7 89.8 78.9 82.4 68.2 70.8 63.8 66.7 56.6 59.5 51.5 54.2 47.0 49.0 43.2 45.2 38.4 40.0 34.5 36.2 31.4 32.8 28.8 30.1 26.6 27.8 24.2 25.3 22.1 23.1 20.4 21.4 18.6 19.5 16.9 17.6 15.3 16.3 13.9 14.6
MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 109 104
MAXIMUM TEMP. COEFFICIENT OF V(BR) (%/°C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.089 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 0.104 0.104 0.105 0.105
1.5KE6.8 (+) 1.5KE6.8A (+) 1.5KE7.5 (+) 1.5KE7.5A (+) 1.5KE8.2 (+) 1.5KE8.2A (+)1.5KE9.1 (+) 1.5KE9.1A (+)1.5KE10 (+) 1.5KE10A (+)1.5KE11 (+)1.5KE11A (+)1.5KE12 (+)1.5KE12A (+)1.5KE13 (+)1.5KE13A (+) 1.5KE15 (+)1.5KE15A (+) 1.5KE16 (+)1.5KE16A (+) 1.5KE18 (+)1.5KE18A (+) 1.5KE20 (+)1.5KE20A (+) 1.5KE22 (+)1.5KE22A (+)1.5KE24 (+)1.5KE24A (+)1.5KE27 (+)1.5KE27A (+)1.5KE30 (+) 1.5KE30A (+)1.5KE33 (+) 1.5KE33A (+) 1.5KE36 (+) 1.5KE36A (+)1.5KE39 (+) 1.5KE39A (+)1.5KE43 (+)1.5KE43A (+)1.5KE47 (+) 1.5KE47A (+)1.5KE51 (+)1.5KE51A (+) 1.5KE56 (+) 1.5KE56A (+) 1.5KE62 (+) 1.5KE62A (+) 1.5KE68 (+)1.5KE68A (+) 1.5KE75 (+)1.5KE75A
Document Number 88301 20-Jun-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
JEDEC TYPE NUMBER 1N6293 1N6293A 1N6294 1N6294A 1N6295 1N6295A 1N6296 1N6296A 1N6297 1N6297A 1N6298 1N6298A 1N6299 1N6299A 1N6300 1N6300A 1N6301 1N6301A 1N6302 1N6302A 1N6303 1N6303A GENERAL SEMICONDUCTOR PART NUMBER 1.5KE82 (+)1.5KE82A (+) 1.5KE91 (+)1.5KE91A (+) 1.5KE100 (+) 1.5KE100A (+)1.5KE110 (+) 1.5KE 110A (+)1.5KE120 (+) 1.5KE120A (+)1.5KE130 (+) 1.5KE130A (+)1.5KE150 (+) 1.5KE150A (+)1.5KE160 (+) 1.5KE160A (+)1.5KE170 (+) 1.5KE170A 1.5KE180 1.5KE180A 1.5KE200 1.5KE200A* 1.5KE220 1.5KE220A* 1.5KE250 1.5KE250A 1.5KE300 1.5KE300A 1.5KE350 1.5KE350A 1.5KE400 1.5KE400A 1.5KE440 1.5KE440A 1.5KE480 1.5KE480A 1.5KE510 1.5KE510A 1.5KE540 1.5KE540A
(+)
BREAKDOWN VOLTAGE V(BR) AT IT (1) (V) MIN 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 136 143 144 152 153 162 162 171 180 190 198 209 225 237 270 285 315 333 360 380 396 418 432 456 459 485 486 513 MAX 90.2 86.1 100.0 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 484 462 528 504 561 535 594 567
TEST CURRENT IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
STAND-OFF VOLTAGE VWM (V) 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 175 185 202 214 243 256 284 300 324 342 356 376 389 408 413 434 437 459
MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (µA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 12.7 13.3 11.5 12.0 10.4 10.9 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 6.5 6.8 6.1 6.4 5.8 6.1 5.2 5.5 4.4 4.6 4.2 4.4 3.5 3.6 3.0 3.1 2.6 2.7 2.4 2.5 2.19 2.28 2.06 2.15 1.94 2.03
MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 344 328 360 344 430 414 504 482 574 548 631 602 686 658 729 698 772 740
MAXIMUM TEMP. COEFFICIENT OF V(BR) (%/°C) 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.106 0.106 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110
Note: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bidirectional types with VR 10 volts and less the ID limit is doubled * Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA)
(+)
Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices
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1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
ORDERING INFORMATION
PREFERRED P/N 1.5KE6.8A-E3/54 UNIT WEIGHT (g) 0.968 PREFERRED PACKAGE CODE 54 BASE QUANTITY 1400 DELIVERY MODE 13" Diameter Paper Tape & Reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 150 TJ = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
tr = 10 µsec. Peak Value IPPM
10
100
Half Value — IPP 2 IPPM 50 10/1000 µsec. Waveform as defined by R.E.A.
1
td 0 0 1.0 2.0 3.0 4.0
0.1 0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
td - Pulse Width (sec.)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
100
10000 Unidirectional Bidirectional
CJ, Capacitance, pF
75
VR = 0 1000
50
100
VR = Rated Stand-off Voltage TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
25
0 0 25 50 75 100 125 150 175 200
10 5 10 100 500
TJ - Initial Temperature (°C)
V(BR), Breakdown Voltage (V)
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 4. Typical Junction Capacitance
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Document Number 88301 20-Jun-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
8.0
100
ΔVC , Incremental Clamping Voltage
7.0
PD, Power Dissipation (W)
Waveform: 10/1000 µs Impulse ΔVC = VC - V(BR)
1.5KE200 1.5KE130 1.5KE75
6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 200 L = 0.375" (9.5 mm) Lead Lengths
20 10 1.5KE39 2.0 1.0 1.5KE33 1.5KE6.8 1.5KE9.1
0.2 0.1 0.5 1 2 10 50
TL - Lead Temperature (°C)
IPP, Peak Pulse Current (A)
Figure 5. Power Derating Curve
Figure 8. Incremental Clamping Voltage Curve (Unidirectional)
200
Δ VC, Incremental Clamping Voltage
Peak Forward Surge Current (A)
TJ = TJ max. 8.3 ms Single Half Sine-Wave 100
100 Waveform: 10/1000 µs Impulse ΔVC = VC - V(BR) 20 10 1.5KE75C 2.0 1.0 1.5KE39C 1.5KE30C 1.5KE15C 11C 1.5KE7.5C
1.5KE200C
0.2 0.1 0.5 1 2 10 20 50
10 1 10 100
Number of Cycles at 60 Hz
IPP, Peak Pulse Current (A)
Figure 6. Maximum Non-repetitive Forward Surge Current Uni-Directional only
100
Figure 9. Incremental Clamping Voltage Curve (Bidirectional)
100 1.5KE200 1.5KE130 1.5KE100 1.5KE75
Δ VC, Incremental Clamping Voltage
Δ VC, Incremental Clamping Voltage
Waveform: 8/20 µs Impulse Δ VC = VC - V(BR) 20 10
20 10
Waveform: 8/20 µs Impulse Δ VC = VC - V(BR)
1.5KE200C 1.5KE75C 1.5KE39C 1.5KE30C 1.5KE15C 1.5KE11C 1.5KE7.5C
2.0 1.0
1.5KE39 1.5KE33 1.5KE6.8 1.5KE9.1 1.5KE18 1.5KE12
2 1
0.2 0.1 0.5 1 2 10 20 50
0.2 0.1 0.5 1 2.0 10 20 50
IPP, Peak Pulse Current (A)
IPP, Peak Pulse Current (A)
Figure 7. Incremental Clamping Voltage Curve (Unidirectional)
Figure 10. Incremental Clamping Voltage Curve (Bidirectional)
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1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
100
1000
Instantaneous Forward Current (A)
Reverse Leakage Current (µA)
2.0
100
10
10
1
1.0
TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle
0.1
0.1 0 0.4 0.8 1.2 1.6
0.01 0 100 200 300 400 500 600
Instantaneous Forward Voltage (V)
Breakdown Voltage (V)
Figure 11. Instantaneous Forward Voltage Characteristics Curve Figure 13. Typical Reverse Leakage Characteristics
100
Transient Thermal Impedance (°C/W)
10
1
0.1 0.001
0.01
0.1
1
10
100
1000
tp - Pulse Duration (sec.)
Figure 12. Typical Transient Thermal Impedance
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Document Number 88301 20-Jun-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2)
1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA.
APPLICATION NOTES • This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
• The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: R.E.A. specification P.E. 60).
• This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS diode clamping action is effectively instantaneous (1 x 10-9 seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings.
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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