10ETF02

10ETF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base cathode 2 The 10ETF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Pb-free Available RoHS* The glass passivation ensures stable reliable COMPLIANT operation in the most severe temperature and power cycling conditions. TO-220AC 1 Cathode 3 Anode This product series has been designed and qualified for industrial level and lead (Pb)-free. APPLICATIONS PRODUCT SUMMARY VRRM VF at 10 A trr 200 to 600 V < 1.2 V 50 ns • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/µs 10 A, TJ = 25 °C Sinusoidal waveform CHARACTERISTICS VALUES 200 to 600 10 150 50 1.2 - 40 to 150 UNITS V A ns V °C VOLTAGE RATINGS PART NUMBER 10ETF02PbF 10ETF04PbF 10ETF06PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 2 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 128 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 10 150 160 112.5 160 1600 A2 s A 2 √s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94090 Revision: 17-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 10ETF..PbF Soft Recovery Series Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.2 23.5 0.85 VR = Rated VRRM 0.1 3.0 UNITS V mΩ V mA Fast Soft Recovery Rectifier Diode, 10 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 10 Apk 25 A/µs 25 °C VALUES 145 2.75 0.32 0.6 UNITS ns A µC dir dt Qrr IRM(REC) IFM trr t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance junction to case Maximum thermal resistance junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 1.5 62 0.5 2 0.07 6 (5) 12 (10) 10ETF06 g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94090 Revision: 17-Apr-08 10ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 150 20 Vishay High Power Products Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 145 140 135 130 125 10ETF.. Series RthJC (DC) = 1.5 °C/W 16 10ETF.. Series TJ = 150 °C 30° 90° 60° 120° 180° DC Ø Conduction angle 12 RMS limit 8 Ø 4 Conduction period 30° 120 0 2 4 60° 6 90° 120° 8 10 180° 0 12 0 4 8 12 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 160 10ETF.. Series RthJC (DC) = 1.5 °C/W 140 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) 145 140 120 100 80 60 Ø Conduction period 135 130 120° 125 30° 120 0 2 4 6 8 10 12 14 16 60° 90° 180° DC 10ETF.. Series 40 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 16 120° 180 90° 160 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 14 12 10 8 6 RMS limit 60° 30° 180° Peak Half Sine Wave Forward Current (A) 140 120 100 80 60 40 0.01 10ETF.. Series Ø 4 2 0 0 2 4 6 Conduction angle 10ETF.. Series TJ = 150 °C 8 10 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94090 Revision: 17-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 10ETF..PbF Soft Recovery Series Vishay High Power Products 100 10ETF.. Series 1.2 Fast Soft Recovery Rectifier Diode, 10 A 1.4 10ETF.. Series TJ = 25 °C IFM = 20 A Instantaneous Forward Current (A) Qrr - Maximum Reverse Recovery Charge (µC) 1.0 IFM = 10 A 0.8 0.6 0.4 0.2 IFM = 1 A IFM = 5 A IFM = 2 A 10 TJ = 150 °C TJ = 25 °C 1 0.5 0 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 2.5 10ETF.. Series TJ = 150 °C IFM = 20 A IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 2.0 0.15 IFM = 20 A IFM = 10 A 0.10 IFM = 5 A IFM = 2 A 10ETF.. Series TJ = 25 °C IFM = 1 A 0.05 0 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.4 10ETF.. Series TJ = 150 °C 15 10ETF.. Series TJ = 25 °C IFM = 20 A IFM = 10 A IFM = 5 A IFM = 2 A 6 IFM = 1 A 3 trr - Maximum Reverse Recovery Time (µs) 0.3 Irr - Maximum Reverse Recovery Current (A) 200 12 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 1 A 0 0 40 80 120 160 9 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94090 Revision: 17-Apr-08 10ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 20 10ETF.. Series TJ = 150 °C IFM = 20 A IFM = 10 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 Vishay High Power Products Irr - Maximum Reverse Recovery Current (A) 16 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 1 0.01 Single pulse 0.001 0.001 10ETF.. Series 0.01 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94090 Revision: 17-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 10ETF..PbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Fast Soft Recovery Rectifier Diode, 10 A Device code 10 1 1 2 3 4 5 6 - E 2 T 3 F 4 06 5 PbF 6 Current rating (10 = 10 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95221 http://www.vishay.com/doc?95224 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94090 Revision: 17-Apr-08 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1