VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 10 A
Base common cathode + 2
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level
3 - Anode
D2PAK (SMD-220)
1 Anode -
APPLICATIONS
• Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met
PRODUCT SUMMARY
VRRM VF at 10 A trr 200 V to 600 V < 1.2 V 50 ns
DESCRIPTION
The VS-10ETF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/μs 10 A, TJ = 25 °C Range Sinusoidal waveform CHARACTERISTICS VALUES 200 to 600 10 150 50 1.2 - 40 to 150 UNITS V A ns V °C
VOLTAGE RATINGS
PART NUMBER VS-10ETF02SPbF VS-10ETF04SPbF VS-10ETF06SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 2 IRRM AT 150 °C mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 128 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 10 150 160 112.5 160 1125 A2s A2√s A UNITS
Document Number: 94091 Revision: 26-Apr-10
For technical questions, contact: diodestech@vishay.com
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VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.2 12.7 1.25 0.1 2.0 UNITS V mΩ V mA
Fast Soft Recovery Rectifier Diode, 10 A
RECOVERY CHARACTERISTICS
PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C VALUES 145 2.75 0.32 0.6 UNITS ns A μC
dir dt Qrr IRM(REC) IFM trr t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance junction to case Maximum thermal resistance junction to ambient (PCB mount) Soldering temperature Approximate weight SYMBOL TJ, TStg RthJC RthJA (1) TS DC operation TEST CONDITIONS VALUES - 40 to 150 1.5 °C/W 40 240 2 0.07 10ETF02S Marking device Case style D2PAK (SMD-220) 10ETF04S 10ETF06S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. °C g oz. UNITS °C
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Document Number: 94091 Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 10 A
150 20
Vishay High Power Products
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
145 140 135 130 125 30° 120 0 2 4
10ETF..S Series RthJC (DC) = 1.5 °C/W
16
10ETF..S Series TJ = 150 °C 30°
90° 60° 120° 180° DC
Ø
Conduction angle
12
RMS limit
8
Ø
120° 60° 6 90° 8 180°
4
Conduction period
0 10 12 0 4 8 12 16
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
160 10ETF..S Series RthJC (DC) = 1.5 °C/W 140 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Maximum Allowable Case Temperature (°C)
145 140
Peak Half Sine Wave Forward Current (A)
120 100 80 60
Ø
Conduction period 135 130 60° 125 120 0 2 4 6 8 10 12 14 16 30° 120° 90° 180°
DC
10ETF..S Series
40 1 10 100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current
16 120°
180 90° 160 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
Maximum Average Forward Power Loss (W)
14 12 10 8 6 RMS limit 60° 30°
180°
Peak Half Sine Wave Forward Current (A)
140 120 100 80 60 40 0.01 10ETF..S Series
Ø
4 2 0 0 2 4 6
Conduction angle 10ETF..S Series TJ = 150 °C 8 10
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94091 Revision: 26-Apr-10
For technical questions, contact: diodestech@vishay.com
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VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Instantaneous Forward Current (A)
100 10ETF..S Series 1.2
Fast Soft Recovery Rectifier Diode, 10 A
1.4 10ETF..S Series TJ = 25 °C IFM = 20 A
Qrr - Maximum Reverse Recovery Charge (µC)
1.0 IFM = 10 A 0.8 0.6 0.4 0.2 IFM = 1 A IFM = 5 A IFM = 2 A
10
TJ = 150 °C TJ = 25 °C
1 0.5
0 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
2.5 10ETF..S Series TJ = 150 °C IFM = 20 A IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200
Qrr - Maximum Reverse Recovery Charge (µC)
trr - Maximum Reverse Recovery Time (µs)
2.0
0.15
IFM = 20 A IFM = 10 A
0.10
IFM = 5 A IFM = 2 A 10ETF..S Series TJ = 25 °C IFM = 1 A
0.05
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.4 10ETF..S Series TJ = 150 °C
15 10ETF..S Series TJ = 25 °C IFM = 20 A IFM = 10 A IFM = 5 A IFM = 2 A IFM = 1 A 3
trr - Maximum Reverse Recovery Time (µs)
0.3
Irr - Maximum Reverse Recovery Current (A)
200
12
IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 1 A 0 0 40 80 120 160
9
6
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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For technical questions, contact: diodestech@vishay.com
Document Number: 94091 Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 10 A
20 10ETF..S Series TJ = 150 °C IFM = 20 A IFM = 10 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4
Vishay High Power Products
Irr - Maximum Reverse Recovery Current (A)
16
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)
10
1
0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Steady state value (DC operation)
0.01 Single pulse 0.001 0.001
10ETF..S Series
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 14 - - Thermal Impedance ZthJC Characteristics
Document Number: 94091 Revision: 26-Apr-10
For technical questions, contact: diodestech@vishay.com
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VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Fast Soft Recovery Rectifier Diode, 10 A
VS1
10
2
E
3
T
4
F
5
06
6
S
7
TRL PbF
8 9
1
2 3 4 5 6 7 8
-
HPP product suffix
Current rating (10 = 10 A) Circuit configuration: E = Single diode Package: T = D2PAK (TO-220AC)
-
Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM S = Surface mountable None = Tube TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented)
02 = 200 V 04 = 400 V 06 = 600 V
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions Part marking information Packaging information
www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032
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Document Number: 94091 Revision: 26-Apr-10
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43)
SYMBOL A A1 b b1 b2 b3 c c1 c2 D
MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65
INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380
NOTES
SYMBOL D1 E E1
MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28
INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208
NOTES 3 2, 3 3
4 4 4 2
e H L L1 L2 L3 L4
2.54 BSC
0.100 BSC
3
0.25 BSC
0.010 BSC
Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 Revision: 31-Mar-11
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Document Number: 91000 Revision: 11-Mar-11
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