10ETF12FP

10ETF..FPPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base cathode 2 The 10ETF...FPPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Available RoHS* COMPLIANT The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. 1 Cathode 3 Anode TO-220AC FULL-PAK The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved. This product series has been designed and qualified for industrial level and lead (Pb)-free. PROTDUCT SUMMARY VF at 10 A trr VRRM < 1.33 V 80 ns 1000 to 1200 V APPLICATIONS • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF trr TJ 10 A, TJ = 25 °C 1 A, 100 A/µs CHARACTERISTICS Sinusoidal waveform VALUES 10 1000 to 1200 160 1.33 80 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS PART NUMBER 10ETF10FPPbF 10ETF12FPPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1100 1300 IRRM AT 150 °C mA 4 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2 √ t TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 10 160 185 128 180 1800 A2 s A2 √ s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94093 Revision: 28-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 10ETF..FPPbF Soft Recovery Series Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.33 22.9 0.96 VR = Rated VRRM 0.1 4 UNITS V mΩ V mA Fast Soft Recovery Rectifier Diode, 10 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Typical snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 10 Apk 25 A/µs 25 °C VALUES 310 4.7 1.05 0.6 UNITS ns A µC dir dt Qrr IRM(REC) IFM trr t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC FULL-PAK (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 2.5 62 0.5 2 0.07 6 (5) 12 (10) 10ETF12FP g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94093 Revision: 28-May-08 10ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 150 24 Vishay High Power Products Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 10ETF.. Series RthJC(DC) = 2.5 °C/W 20 16 12 8 4 0 Ø 120 110 100 90 80 70 0 2 4 6 30° 60° DC 180° 120° 90° 60° 30° Conduction angle RMS limit Ø 120° 180° 90° 8 10 12 Conduction period 10ETF.. Series TJ = 150 °C 0 2 4 6 8 10 12 14 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 180 10ETF.. Series RthJC(DC) = 2.5 °C/W 160 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) 140 130 Peak Half Sine Wave Forward Current (A) 140 120 100 80 60 40 10ETF.. Series Ø 120 110 100 90 30° 80 70 0 2 4 6 8 10 60° 90° 120° Conduction period DC 180° 12 14 16 18 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 16 200 180° 120° 90° 60° 30° RMS limit Ø Maximum Average Forward Power Loss (W) 14 12 10 8 6 4 2 0 0 2 180 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Peak Half Sine Wave Forward Current (A) 160 140 120 100 80 60 40 0.01 10ETF.. Series 0.1 Conduction angle 10ETF.. Series TJ = 150 °C 4 6 8 10 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94093 Revision: 28-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 10ETF..FPPbF Soft Recovery Series Vishay High Power Products Instantaneous Forward Current (A) 1000 TJ = 150 °C TJ = 25 °C 100 Fast Soft Recovery Rectifier Diode, 10 A 2.0 10ETF.. Series TJ = 25 °C IFM = 10 A Qrr - Maximum Reverse Recovery Charge (µC) 1.6 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 10 10ETF.. Series 1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 40 80 120 160 200 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 200 10ETF.. Series TJ = 25 °C 5 10ETF.. Series TJ = 150 °C IFM = 10 A trr - Maximum Reverse Recovery Time (µs) Qrr - Maximum Reverse Recovery Charge (µC) 4 IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A 3 IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 2 1 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.8 10ETF.. Series TJ = 150 °C 20 10ETF.. Series TJ = 25 °C IFM = 10 A IFM = 8 A 12 IFM = 5 A IFM = 2 A IFM = 1 A 4 trr - Maximum Reverse Recovery Time (µs) 0.6 0.4 IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A Irr - Maximum Reverse Recovery Current (A) 200 16 8 0.2 0 0 40 80 120 160 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94093 Revision: 28-May-08 10ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 25 10ETF.. Series TJ = 150 °C IFM = 10 A Vishay High Power Products Irr - Maximum Reverse Recovery Current (A) 20 IFM = 8 A 15 IFM = 5 A IFM = 2 A 10 IFM = 1 A 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (°C/W) 10 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 1 Steady state value (DC operation) Single pulse 10ETF.. Series 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94093 Revision: 28-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 10ETF..FPPbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Device code Fast Soft Recovery Rectifier Diode, 10 A 10 1 E 2 T 3 F 4 12 5 FP 6 PbF 7 1 2 3 4 5 6 7 - Current rating (10 = 10 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM FULL-PAK None = Standard production PbF = Lead (Pb)-free 10 = 1000 V 12 = 1200 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95005 http://www.vishay.com/doc?95009 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94093 Revision: 28-May-08 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 Vishay Semiconductors 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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