10ETS12FP

10ETS..FPPbF High Voltage Series Vishay High Power Products Input Rectifier Diode TO-220 FULL-PAK, 10 A DESCRIPTION Base cathode The 10ETS12FPPbF rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Available RoHS* COMPLIANT TO-220AC FULL-PAK 1 Cathode 3 Anode PRODUCT SUMMARY VF at 10 A IFSM VRRM < 1.1 V 200 A 800/1200 V Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS) is UL E78996 approved This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 12.0 THREE-PHASE BRIDGE 16.0 UNITS A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 10 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform Range VALUES 10 800/1200 200 1.1 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 10ETS08FPPbF 10ETS12FPPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 IRRM AT 150 °C mA 0.5 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2 √ t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 10 170 200 130 145 1450 A2 s A2√s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94335 Revision: 23-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 10ETS..FPPbF High Voltage Series Vishay High Power Products Input Rectifier Diode TO-220 FULL-PAK, 10 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.1 20 0.82 0.05 0.50 UNITS V mΩ V mA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220 FULL-PAK (94/V0) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 2.5 62 0.5 2 0.07 6 (5) 12 (10) 10ETS12FP g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94335 Revision: 23-Apr-08 10ETS..FPPbF High Voltage Series Input Rectifier Diode TO-220 FULL-PAK, 10 A 150 140 Vishay High Power Products 20 18 Maximum Average Forward Power Loss (W) 10ETS.. Series RthJC (DC) = 2.5 °C/W Maximum Allowable Case Temperature (°C) 16 14 12 10 8 6 4 2 130 120 110 100 90 80 Ø Conduction angle DC 180° 120° 90° 60° 30° RMS limit Ø 30° 60° 90° 120° 8 10 180° Conduction period 10ETS.. Series TJ = 150 °C 0 2 4 6 8 10 12 14 16 0 0 2 4 6 12 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 140 130 120 110 100 90 10ETS.. Series RthJC (DC) = 2.5 °C/W 200 180 Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) 160 140 120 100 80 60 Ø At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Conduction period 30° 60° 90° 120° 0 2 4 6 8 10 180° 12 14 DC 10ETS.. Series 40 16 18 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 16 Maximum Average Forward Power Loss (W) 14 12 10 8 6 Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° RMS limit 240 220 200 180 160 140 120 100 80 60 40 10 0.01 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Ø 4 2 0 Conduction angle 10ETS.. Series TJ = 150 °C 0 2 4 6 8 10ETS.. Series 0.1 1.0 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94335 Revision: 23-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 10ETS..FPPbF High Voltage Series Vishay High Power Products Instantaneous Forward Current (A) 100 Input Rectifier Diode TO-220 FULL-PAK, 10 A TJ = 25 °C TJ = 150 °C 10 10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 10 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 10ETS.. Series 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94335 Revision: 23-Apr-08 10ETS..FPPbF High Voltage Series Input Rectifier Diode TO-220 FULL-PAK, 10 A ORDERING INFORMATION TABLE Device code Vishay High Power Products 10 1 1 2 3 4 - E 2 T 3 S 4 12 5 FP 6 PbF 7 Current rating (10 = 10 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier 08 = 800 V 12 = 1200 V 5 6 7 - Voltage rating FULL-PAK None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95005 http://www.vishay.com/doc?95009 Document Number: 94335 Revision: 23-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 Vishay Semiconductors 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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