10TTS08PBF

10TTS08PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A DESCRIPTION/FEATURES 2 (A) 1 (K) (G) 3 The 10TTS08PbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for medium power switching and phase control RoHS* COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. TO-220AB PRODUCT SUMMARY VT at 6.5 A ITSM VRRM < 1.15 V 140 A 800 V Also available in SMD-220 package (series 10TTS08SPbF). This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 13.5 THREE-PHASE BRIDGE 17 UNITS A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) VRRM/VDRM ITSM VT dV/dt dI/dt TJ Range 6.5 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 6.5 A 10 800 140 1.15 150 100 - 40 to 125 V A V V/µs A/µs °C UNITS VOLTAGE RATINGS PART NUMBER 10TTS08PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 IRRM/IDRM AT 125 °C mA 1.0 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94572 Revision: 26-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 10TTS08PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IT(RMS) ITSM I2 t I2√t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt TEST CONDITIONS TC = 112 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 6.5 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM VALUES 6.5 10 120 140 72 100 1000 1.15 17.3 0.85 0.05 1.0 30 50 150 100 V/µs A/µs mA A2 s A2√s V mΩ V A UNITS Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TJ = 25 °C TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) +IGM -VGM Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT VGD IGD Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 20 15 10 1.2 1 0.7 0.2 0.1 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.8 3 100 µs UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94572 Revision: 26-May-08 10TTS08PbF High Voltage Series Phase Control SCR, 10 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 1.5 62 0.5 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 10TTS08 Maximum Allowable Case T emperature (°C) 10T S T 08 R thJC (DC) = 1.5 K/ W 120 Conduction Angle Maximum Average On-state Power Loss (W) 125 8 7 6 5 4 3 Conduction Angle 180° 120° 90° 60° 30° R Limit MS 115 30° 60° 110 90° 120° 180° 105 0 1 2 3 4 5 6 7 Average On-state Current (A) 2 1 0 0 1 2 3 4 5 6 7 Average On-state Current (A) 10T S T 08 TJ= 125°C Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum Allowable Case T emperature (°C) 10T S T 08 R thJC (DC) = 1.5 K/ W Maximum Average On-state Power Loss (W) 125 12 10 8 6 R Limit MS 4 2 0 0 2 4 6 8 10 12 Average On-state Current (A) Conduc tion Period 120 Conduction Period DC 180° 120° 90° 60° 30° 115 30° 60° 110 90° 120° 180° DC 105 0 2 4 6 8 10 12 Average On-state Current (A) 10T S T 08 TJ = 125°C Fig. 2 - Current Rating Characteristic Fig. 4 - On-State Power Loss Characteristics Document Number: 94572 Revision: 26-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 10TTS08PbF High Voltage Series Vishay High Power Products Phase Control SCR, 10 A Peak Half S Wave On-state Current (A) ine 120 110 100 90 80 70 60 1 At Any R ated Load Condition And With R ated V RRM Applied Following S urge. ine Peak Half S Wave On-state Current (A) 130 150 140 130 120 110 100 90 80 70 60 Initial TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125°C No Voltage R eapplied R ated V RRMR eapplied 10T S T 08 10T S T 08 10 100 50 0.01 0.1 Puls T e rain Duration (s ) 1 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 10T S T 08 100 10 TJ= 25°C TJ= 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Insta ntaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (°C/W) 10 S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 10TT S08 0.01 0.0001 0.1 0.001 0.01 S quare Wave Pulse Duration (s) 0.1 1 Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94572 Revision: 26-May-08 10TTS08PbF High Voltage Series Phase Control SCR, 10 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 10 1 1 2 3 4 5 6 - T 2 T 3 S 4 08 5 PbF 6 Current rating Circuit configuration: T = Single thyristor Package: T = TO-220AB Type of silicon: S = Converter grade - Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95222 http://www.vishay.com/doc?95225 Document Number: 94572 Revision: 26-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1