10WT10FNTR

VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK (TO-251AA) Base cathode 4 D-PAK (TO-252AA) Base cathode 4 • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode VS-10UT10 VS-10WT10FN PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS I-PAK (TO-251AA), D-PAK (TO-252AA) 10 A 100 V 0.66 V 4 mA at 125 °C 175 °C Single die 54 mJ APPLICATIONS • High efficiency SMPS • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 10 Apk, TJ = 125 °C (typical) Range CHARACTERISTICS VALUES 100 0.615 - 55 to 175 UNITS V V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C VS-10UT10 VS-10WT10FN 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current Note (1) Measured connecting 2 anode pins Revision: 10-Aug-11 Document Number: 94647 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 12 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse (see fig. 8) TEST CONDITIONS 50 % duty cycle at TC = 159 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied (1) VALUES 10 610 A 110 54 IAS at TJ max. mJ A UNITS A VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 5A 10 A Forward voltage drop VFM (1)(2) 20 A 5A 10 A 20 A Reverse leakage current Junction capacitance Series inductance Maximum voltage rate of change IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C VR = Rated VR TJ = 125 °C TJ = 25 °C TEST CONDITIONS TYP. 0.630 0.735 0.840 0.530 0.615 0.730 400 8.0 MAX. 0.810 0.890 0.660 0.770 50 4 10 000 μA mA pF nH V/μs V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR Notes (1) Pulse width < 300 μs, duty cycle < 2 % (2) Only 1 anode pin connected THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight Case style I-PAK Case style D-PAK SYMBOL TJ, TStg RthJC RthCS DC operation TEST CONDITIONS VALUES - 55 to 175 2 °C/W 0.3 0.3 0.01 10UT10 10WT10FN g oz. UNITS °C Marking device IF - Instantaneous Forward Current (A) 100 100 IR - Reverse Current (mA) 175 °C 10 150 °C 1 0.1 75 °C 0.01 0.001 0.0001 50 °C 25 °C 125 °C 100 °C TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Aug-11 Document Number: 94647 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com 1000 Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Allowable Case Temperature (°C) 180 10 Average Power Loss (W) 175 170 DC 165 160 155 150 See note (1) 145 0 2 4 6 8 10 12 14 16 IF(AV) Average Forward Current (A) Square wave (D = 0.50) 80 % rated VR applied 8 180° 120° 90° 60° 30° RMS limit 6 4 DC 2 0 0 3 6 9 12 15 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 10-Aug-11 Document Number: 94647 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com IFSM - Non-Repetitive Surge Current (A) 1000 Vishay Semiconductors 100 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR 100 Avalanche Current (A) TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Avalanche Energy (mJ) 10 TJ = 25 °C TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 10-Aug-11 Document Number: 94647 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10UT10, VS-10WT10FN www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 - 10 2 U 3 T 4 10 5 FN 6 TRL 7 Vishay Semiconductors product Current rating (10 A) Package: U = I-PAK W = D-PAK 4 5 6 7 - T = Trench Voltage code (100 V) TO-252AA (D-PAK) D-PAK, I-PAK: None = Tube (75 pieces) D-PAK only: TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model www.vishay.com/doc?95024 www.vishay.com/doc?95025 www.vishay.com/doc?95033 www.vishay.com/doc?95026 Revision: 10-Aug-11 Document Number: 94647 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors I-PAK - S, D-PAK DIMENSIONS FOR I-PAK - S in millimeters E A c2 b3 E1 4 D 3 2 1 L4 L5 L H b2 e e c b b3 SYMBOL E L L4 L5 D H b b2 b3 b4 e A c c2 D1 E1 DIMENSIONAL REQUIREMENTS MIN. 6.40 3.98 0.66 1.96 6.00 11.05 0.64 0.77 5.21 0.41 2.20 0.40 0.40 5.30 4.40 NOM. 6.60 4.13 0.76 2.16 6.10 11.25 0.76 0.84 5.34 0.51 2.286 BSC 2.30 0.50 0.50 2.38 0.60 0.60 MAX. 6.70 4.28 0.86 2.36 6.20 11.45 0.88 1.14 5.46 0.61 Document Number: 95024 Revision: 05-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com D1 www.vishay.com 1 Outline Dimensions Vishay Semiconductors I-PAK - S, D-PAK DIMENSIONS FOR D-PAK in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 95024 Revision: 05-Jan-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1