110RKI80

110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A FEATURES • High current and high surge ratings • Hermetic ceramic housing • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TO-209AC (TO-94) TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies 110 A PRODUCT SUMMARY IT(AV) • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 110 TC 90 172 2080 2180 21.7 19.8 400 to 1200 110 - 40 to 140 V μs °C kA2s A UNITS A °C I2t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 110RKI 111RKI 80 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1300 20 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94379 Revision: 04-Nov-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 83 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 110 90 172 2080 2180 1750 Sinusoidal half wave, initial TJ = TJ maximum 1830 21.7 19.8 15.3 14.0 217 0.82 1.02 2.16 1.70 1.57 200 400 kA2√s V mΩ V mA kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 6 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs VR = 50 V, dV/dt = 20 V/μs, gate 0 V 25 Ω VALUES 300 1 μs 110 UNITS A/μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum rated VDRM/VRRM applied VALUES 500 20 UNITS V/μs mA www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94379 Revision: 04-Nov-09 110RKI...PbF, 111RKI...PbF Series Phase Control Thyristors (Stud Version), 110 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 140 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 140 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 80 40 2.5 1.6 1 6.0 TJ = TJ maximum, tp ≤ 5 ms TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 12 3.0 3.0 20 10 120 2 mA V mA MAX. UNITS Vishay High Power Products W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, ± 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 140 - 40 to 150 0.27 K/W 0.1 15.5 (137) 14 (120) 130 UNITS °C N·m (lbf · in) g TO-209AC (TO-94) ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.043 0.052 0.066 0.096 0.167 RECTANGULAR CONDUCTION 0.031 0.053 0.071 0.101 0.169 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94379 Revision: 04-Nov-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 140 RthJC (DC) = 0.27 K/W 140 RthJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (°C) 130 120 110 100 90 30° 80 0 20 40 60 80 100 120 60° 90° 120° 180° Ø Maximum Allowable Case Temperature (°C) 130 120 110 100 90 30° 80 90° 70 0 20 40 60 80 100 120 140 160 180 180° 60° 120° Ø Conduction angle Conduction period DC 94379_01 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics 94379_02 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 160 160 Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ø 140 120 100 80 60 40 20 0 0 R th 180° 120° 90° 60° 30° 0. 6 SA 0.8 RMS limit 1K 1.5 K/ K/ = W 0. 3 W K/ W /W R -Δ K/W 2 K/ W Conduction angle TJ = 140 °C 4 K/W 5 K/W 20 40 60 80 100 120 140 94379_03a Average On-State Current (A) 94379_03b Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics 220 220 DC 180° 120° 90° 60° 30° Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 Ø 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 R th SA = 0. 3 0.6 0.8 K/ RMS limit K/ W W K/ 1K W /W -Δ R 1.5 K /W 2 K/W 4 K/W Conduction period TJ = 140 °C 5 K/W 94379_04a Average On-State Current (A) 94379_04b Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94379 Revision: 04-Nov-09 110RKI...PbF, 111RKI...PbF Series Phase Control Thyristors (Stud Version), 110 A 2000 1800 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 140 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 2500 Vishay High Power Products Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) 2000 1600 1400 1200 1000 800 1 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 140 °C No voltage reapplied Rated VRRM reapplied 1500 1000 10 100 500 0.01 94379_06 0.1 1 10 94379_05 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) 10 000 TJ = 25 °C 1000 TJ = 140 °C 100 10 1 0 1 2 3 4 5 94379_07 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 1 ZthJC - Transient Thermal Impedance (K/W) Steady state value RthJC = 0.27 K/W (DC operation) 0.1 0.01 0.001 0.0001 94379_08 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Document Number: 94379 Revision: 04-Nov-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 110RKI...PbF, 111RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 100 Rectangular gate pulse (a) Recommended load line for rated dI/dt: 20 V, 30 Ω, tr ≤ 0.5 μs, tp ≥ 6 μs (b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω, tr ≤ 1 μs, tp ≥ 6 μs (1) PGM = 12 W, tp = 5 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms (4) PGM = 200 W, tp = 300 μs Instantaneous Gate Voltage (V) (a) (b) TJ = 40 °C 10 TJ = 25 °C TJ = 140 °C 1 VGD 0.1 0.001 IG D 0.01 (1) (2) (3) (4) Frequency limited by PG(AV) 0.1 1 10 100 1000 94379_09 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code 11 1 1 0 2 - RKI 3 120 4 PbF 5 IT(AV) rated average output current (rounded/10) 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) Thyristor Voltage code x 10 = VRRM (see Voltage Ratings table) None = Standard production PbF = Lead (Pb)-free 2 3 4 5 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95003 www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94379 Revision: 04-Nov-09 Outline Dimensions Vishay Semiconductors TO-209AC (TO-94) for 110RKI and 111RKI Series DIMENSIONS in millimeters (inches) Ceramic housing 37 )M IN 9 .5 (0. 16.5 (0.65) MAX. Ø 8.5 (0.33) Ø 4.3 (0.17) 2.6 (0.10) MAX. Flexible lead C.S. 16 mm (0.025 s.i.) C.S. 0.4 mm2 (0.0006 s.i.) 2 20 (0.79) MIN. Red silicon rubber Red cathode 157 (6.18) 170 (6.69) White gate 215 ± 10 (8.46 ± 0.39) Fast-on terminals 55 (2.16) MIN. 24 (0.94) MAX. 10 (0.39) MAX. 21 (0.83) MAX. Red shrink White shrink Ø 22.5 (0.88) MAX. AMP. 280000-1 REF-250 SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Note • For metric device: M12 x 1.75 contact factory Document Number: 95363 Revision: 25-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 . Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1