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11DQ04TR

11DQ04TR

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    11DQ04TR - Schottky Rectifier, 1.1 A - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
11DQ04TR 数据手册
11DQ03, 11DQ04 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Lead (Pb)-free plating • Designed and qualified for industrial level DO-204AL PRODUCT SUMMARY IF(AV) VR 1.1 A 30/40 V DESCRIPTION The 11DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 µs sine 1 Apk, TJ = 25 °C Range CHARACTERISTICS Rectangular waveform VALUES 1.1 30/40 225 0.55 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 11DQ03 30 11DQ04 40 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current See fig. 6 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 75 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 1.0 A, L = 6 mH Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical Following any rated load condition and with rated VRRM applied VALUES 1.1 225 35 3.0 1.0 mJ A A UNITS Document Number: 93205 Revision: 06-Nov-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 11DQ03, 11DQ04 Vishay High Power Products Schottky Rectifier, 1.1 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 1A Maximum forward voltage drop See fig. 1 VFM (1) 2A 1A 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C VALUES 0.55 0.71 0.50 0.61 1.0 6.0 60 8.0 10 000 mA pF nH V/µs V UNITS TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to ambient Typical thermal resistance, junction to lead Approximate weight SYMBOL TJ (1), TStg RthJA RthJL DC operation Without cooling fin DC operation See fig. 4 TEST CONDITIONS VALUES - 40 to 150 100 °C/W 81 0.33 0.012 Case style DO-204AL (DO-41) 11DQ03 11DQ04 g oz. UNITS °C Marking device Note (1) dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93205 Revision: 06-Nov-08 11DQ03, 11DQ04 Schottky Rectifier, 1.1 A Vishay High Power Products 10 Junction Capacitance - CT (pF) 100 T = 25˚C J Instantaneous Forward Current - IF (A) TJ = 150˚C TJ = 125˚C 10 0 10 20 30 40 50 1 Reverse Voltage - VR (V) TJ = 25˚C Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 150 Allowable Case Temperature - (°C) 120 DC 90 60 Square wave (D = 0.50) 80% Rated V applied R 30 see note (1) 0.1 0 0.3 0.6 0.9 1.2 1.5 0 0 0.3 0.6 0.9 1.2 1.5 Average Forward Current - IF(AV) (A) Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 0.8 100 10 Reverse Current - IR (mA) T J = 150˚C Average Power Loss - (Watts) 0.6 1 125˚C D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC 0.1 0.01 25˚C 0.4 0.2 0.001 0.0001 0 10 20 30 40 Reverse Voltage - VR (V) 0 0 0.3 0.6 0.9 1.2 1.5 Average Forward Current - IF(AV) (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Document Number: 93205 Revision: 06-Nov-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 11DQ03, 11DQ04 Vishay High Power Products Schottky Rectifier, 1.1 A 1000 Non-Repetitive Surge Current - IFSM (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge 100 10 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 6 - Maximum Non-Repetitive Surge Current ORDERING INFORMATION TABLE Device code 11 1 1 2 3 4 5 - D 2 Q 3 04 4 TR 5 11 = 1.1 A (axial and small packages - current is x 10) D = DO-41 package Q = Schottky Q.. series 04 = Voltage ratings TR = Tape and reel package (5000 pcs) None = Box package (1000 pcs) 03 = 30 V 04 = 40 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95241 http://www.vishay.com/doc?95304 http://www.vishay.com/doc?95308 www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93205 Revision: 06-Nov-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
11DQ04TR
1. 物料型号: - 型号为11DQ03和11DQ04,属于Vishay High Power Products的Schottky Rectifier,电流容量为1.1A。

2. 器件简介: - 11DQ..系列轴向引线肖特基整流器,优化了极低的正向电压降,具有中等漏电流。典型应用包括开关电源、转换器、自由轮流通道二极管和反向电池保护。

3. 引脚分配: - 文档中提到了阴极和阳极,但没有具体说明引脚编号或分配。

4. 参数特性: - 包括低轮廓轴向引线外形、高频率操作、极低正向电压降、高纯度高温环氧封装、增强机械强度和防潮性能的防护环、无铅镀层、工业级设计和认证。

5. 功能详解: - 详细描述了最大直流反向电压、最大工作峰值反向电压、最大平均正向电流、最大峰值非重复浪涌电流、非重复雪崩能量、重复雪崩电流等参数。

6. 应用信息: - 适用于开关电源、转换器、自由轮流通道二极管和反向电池保护等场合。

7. 封装信息: - 封装类型为DO-204AL,也称为DO-41。标记设备为11DQ03和11DQ04。
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