VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
Phase Control SCR, 8 A
2 Anode
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition
D2PAK
1 Cathode
3 Gate
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification and crow-bar (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines
PRODUCT SUMMARY
VT at 8 A ITSM VRRM < 1.2 V 140 A 800 V
DESCRIPTION
The VS-12TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 13.5 THREE-PHASE BRIDGE 17 UNITS A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) IT(RMS) VRRM/VDRM ITSM VT dV/dt dI/dt TJ Range 8 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 8 A 12.5 800 140 1.2 150 100 - 40 to 125 V A V V/μs A/μs °C UNITS
VOLTAGE RATINGS
PART NUMBER VS-12TTS08SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 IRRM/IDRM AT 125 °C mA 1.0
Document Number: 94499 Revision: 08-Jun-10
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VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS TC = 108 °C, 180° conduction, half sine wave 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C I2√t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 8 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VALUES 8 12.5 A 120 140 72 100 1000 1.2 16.2 0.87 0.05 VR = Rated VRRM/VDRM 1.0 mA 30 50 150 100 V/μs A/μs A2√s V mΩ V A2s UNITS
Phase Control SCR, 8 A
I2t
Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TJ = 25 °C
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate voltage to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGD IGD TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 W 2.0 1.5 10 20 15 10 1.2 1 V 0.7 0.2 0.1 mA mA A V UNITS
SWITCHING
PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.8 3 100 μs UNITS
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Document Number: 94499 Revision: 08-Jun-10
VS-12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight 0.07 minimum Mounting torque maximum Marking device Case style D2PAK (SMD-220) 12 (10) 6 (5) oz. kgf ⋅ cm (lbf ⋅ in) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 1.5 62 0.5 2 g °C/W UNITS °C
12TTS08S
Maximum Allowable Case T emperature (°C)
12T 08 TS R thJC (DC) = 1.5 K/ W 120
Maximum Average On-state Power Loss (W)
125
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Average On-state Current (A)
Conduction Angle
180° 120° 90° 60° 30° R Limit MS
115
Conduc tion Angle
110 30° 105 60° 90° 120° 180° 100 0 2 4 6 8 10 Average On-state Current (A)
12T S T 08 TJ= 125°C
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case T emperature (°C)
12T S T 08 R thJC(DC) = 1.5 K/ W
Maximum Average On-state Power Loss (W)
125
14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 Average On-state Current (A) DC 180° 120° 90° 60° 30° R Limit MS
Conduction Period
120
115
Conduction Period
110
30° 60° 90° 120° 180° DC 12 14
105
12T S T 08 TJ = 125°C
100 0 2 4 6 8 10 Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94499 Revision: 08-Jun-10
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VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
Phase Control SCR, 8 A
Peak Half S Wave On-state Current (A) ine
Peak Half S Wave On-state Current (A) ine
130 120 110 100 90 80 70 60 1
At Any R ated Load Condition And With R ated V RRM Applied F ollowing S urge.
150 140 130 120 110 100 90 80 70 60
Initial TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s
Maximum Non R epetitive S urge Current Versus Puls T e rain Duration. Control Of Conduction May Not B Maintained. e Initial TJ= 125°C No Voltage R eapplied R ated VRRM R eapplied
12T S T 08
12T S T 08
10
100
50 0.01
0.1 Puls T e rain Duration (s )
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000 Instantaneous On-state Current (A) 12T S T 08
100
10
TJ= 25°C TJ= 125°C
1 0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T ransient T hermal Impedance Z thJC (°C/W)
10 S teady S tate Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 12T S T 08 0.01 0.0001
0.1
0.001
0.01 S quare Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance ZthJC Characteristics
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Document Number: 94499 Revision: 08-Jun-10
VS-12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS1
1 2 3 4 5 6 7 8
12
2 -
T
3
T
4
S
5
08
6
S
7
TRL PbF
8 9
HPP product suffix Current rating (12.5 A) Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier Voltage rating (08 = 800 V) S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions Part marking information Packaging information
www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032
Document Number: 94499 Revision: 08-Jun-10
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Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43)
SYMBOL A A1 b b1 b2 b3 c c1 c2 D
MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65
INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380
NOTES
SYMBOL D1 E E1
MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28
INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208
NOTES 3 2, 3 3
4 4 4 2
e H L L1 L2 L3 L4
2.54 BSC
0.100 BSC
3
0.25 BSC
0.010 BSC
Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 Revision: 31-Mar-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000 Revision: 11-Mar-11
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