New Product
VS-15AWL06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
Base cathode 4, 2
• Ultrafast recovery time, extremely low VF and soft recovery • 175 °C maximum operating junction temperature • For PFC DCM operation • Low leakage current
D-PAK (TO-252AA)
1 Anode
3 Anode
• Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
DESCRIPTION/APPLICATIONS PRODUCT SUMMARY
Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation D-PAK (TO-252AA) 15 A 600 V 1.05 V 60 ns 175 °C Single die
State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg TC = 148 °C TJ = 25 °C TC = 148 °C, f = 20 kHz, d = 50 % TEST CONDITIONS VALUES 600 15 180 30 - 65 to 175 °C A UNITS V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA I F = 15 A IF = 15 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 0.99 0.85 11 8 MAX. 1.05 0.92 10 120 μA pF nH V UNITS
Reverse leakage current Junction capacitance Series inductance
Document Number: 93236 Revision: 15-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 15 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 60 190 220 290 21 25 2.6 4 MAX. 120 A ns UNITS
Reverse recovery charge
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Approximate weight Marking device Case style D-PAK (TO-252AA) SYMBOL TJ, TStg RthJC RthJA TEST CONDITIONS MIN. - 65 TYP. 1.4 0.3 0.01 15AWL06FN MAX. 175 1.8 °C/W 70 g oz. UNITS °C
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For technical questions within your region, please contact one of the following: Document Number: 93236 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
Vishay Semiconductors
IF - Instantaneous Forward Current (A)
100
100 TJ = 175 °C
IR - Reverse Current (μA)
10 1 0.1 0.01 0.001 0.0001
TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C
TJ = 175 °C 10
TJ = 125 °C 1 TJ = 25 °C
0.1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
93236_02
0
100
200
300
400
500
600
93236_01
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
CT - Junction Capacitance (pF)
10
1 0
93236_03
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
10
1
0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
0.01
0.1
1
93236_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93236 Revision: 15-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Vishay Semiconductors
180 170 350 160 150 140 130 120 0
93236_05
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
Allowable Case Temperature (°C)
450 400
DC
300
IF = 15 A, TJ = 125 °C
trr (ns)
250 200 150 100 50 IF = 15 A, TJ = 25 °C
Square wave (D = 0.50) Rated VR applied See note (1) 5 10 15 20 25
0 100
93236_07
1000
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current
20
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
5000 4500 IF = 15 A, TJ = 125 °C
Average Power Loss (W)
15 RMS limit
4000
Qrr (nC)
3500 3000 2500 2000 1500 100 IF = 15 A, TJ = 25 °C
10
5
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC
0 0
93236_06
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
93236_08
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following: Document Number: 93236 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
Vishay Semiconductors
VR = 200 V
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93236 Revision: 15-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS1 1 2 3 -
15
2
A
3
W
4
L
5
06
6
FN
7
TR
8
-E3
9
Vishay Semiconductor product Current rating (15 = 15 A) Circuit configuration: A = Single diode (2 anodes)
4 5 6 7 8 9
-
Package identifier: W = D-PAK L = Hyperfast rectifier Voltage rating (06 = 600 V) FN = TO-252AA TR = Tape and reel Environmental digit: -E3 = RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N VS-15AWL06FNTR-E3 QUANTITY PER T/R 2000 MINIMUM ORDER QUANTITY 2000 PACKAGING DESCRIPTION 13" diameter reel
LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information (TR only) SPICE model www.vishay.com/doc?95016 www.vishay.com/doc?95176 www.vishay.com/doc?95033 www.vishay.com/doc?95372
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For technical questions within your region, please contact one of the following: Document Number: 93236 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74)
E1 4
0.245 MIN. (6.23)
3
2
1
(2) L5 b b2 2x e
Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L
0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18)
(L1) H (7) C Seating plane A1
SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes
(1) (2) (3) (4) (5)
MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 -
INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 -
NOTES
SYMBOL e H L L1
MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC
INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC
NOTES
2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35°
0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3
3
L2 L3 L4
5 3 5 3
L5 Ø Ø1 Ø2
Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA
(6) (7) (8)
Document Number: 95016 Revision: 04-Nov-08
For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com
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Revision: 12-Mar-12
1
Document Number: 91000