15ETL06FP-N3

VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 15 A FRED Pt® FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220AC Base cathode 2 TO-220 FULL-PAK • Low leakage current • Fully isolated package (VINS = 2500 VRMS) • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) 1 Cathode 3 Anode 1 Cathode 3 Anode VS-15ETL06PbF VS-15ETL06-N3 VS-15ETL06FPPbF VS-15ETL06FP-N3 DESCRIPTION State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-220AC, TO-220FP 15 A 600 V 1.05 V 60 ns 175 °C Single die APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg TC = 154 °C TC = 120 °C (FULL-PAK) TJ = 25 °C TEST CONDITIONS VALUES 600 15 250 30 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance Series inductance Revision: 02-Jan-12 SYMBOL VBR, VR VF IR CT LS IR = 100 μA I F = 15 A IF = 15 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 0.99 0.85 0.1 15 20 8.0 MAX. 1.05 0.92 10 120 μA pF nH V UNITS Document Number: 94004 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 15 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 60 190 220 320 19 26 2.2 4.3 MAX. 120 270 A ns UNITS Reverse recovery charge μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AC Case style TO-220AC FULL-PAK SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 1.0 3.0 0.5 2.0 0.07 MAX. 175 1.3 3.5 70 12 (10) 15ETL06 15ETL06FP g oz. kgf · cm (lbf · in) °C/W UNITS °C (FULL-PAK) 100 100 TJ = 175 °C IF - Instantaneous Forward Current (A) IR - Reverse Current (µA) 10 TJ = 150 °C TJ = 125 °C 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 1 0.4 0.001 0.6 0.8 1.0 1.2 1.4 1.6 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Jan-12 Document Number: 94004 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com 100 Vishay Semiconductors CT - Junction Capacitance (pF) TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10 . 100 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Revision: 02-Jan-12 Document Number: 94004 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com Vishay Semiconductors 25 RMS limit 180 Allowable Case Temperature (°C) 170 DC 160 Square wave (D = 0.50) Rated VR applied Average Power Loss (W) 20 15 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 150 10 140 See note (1) 130 0 5 10 15 20 25 5 DC 0 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 180 500 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Allowable Case Temperature (°C) IF = 30 A IF = 15 A 160 DC 400 trr (ns) Square wave (D = 0.50) 80 % rated VR applied 140 300 120 200 100 See note (1) 80 0 5 10 15 20 25 100 VR = 390 V TJ = 125 °C TJ = 25 °C 1000 0 100 IF(AV) - Average Forward Current (A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) 9000 8000 7000 6000 IF = 30 A IF = 15 A dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Qrr (nC) 5000 4000 3000 2000 1000 0 100 VR = 390 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 02-Jan-12 Document Number: 94004 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com VR = 200 V Vishay Semiconductors 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Revision: 02-Jan-12 Document Number: 94004 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15ETL06PbF, VS-15ETL06-N3, VS-15ETL06FPPbF, VS-15ETL06FP-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 7 8 - 15 2 E 3 T 4 L 5 06 6 FP 7 PbF 8 Vishay Semiconductors product Current rating (15 = 15 A) E = Single diode T = TO-220, D2PAK L = Ultralow VF hyperfast recovery Voltage rating (06 = 600 V) None = TO-220AC FP = TO-220 FULL-PAK Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-15ETL06PbF VS-15ETL06-N3 VS-15ETL06FPPbF VS-15ETL06FP-N3 QUANTITY PER T/R 50 50 50 50 MINIMUM ORDER QUANTITY 1000 1000 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions TO-220AC TO-220FP TO-220ACPbF Part marking information TO-220AC-N3 TO-220FPPbF TO-220FP-N3 www.vishay.com/doc?95221 www.vishay.com/doc?95005 www.vishay.com/doc?95224 www.vishay.com/doc?95068 www.vishay.com/doc?95009 www.vishay.com/doc?95440 Revision: 02-Jan-12 Document Number: 94004 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 Vishay Semiconductors 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000