16CTT100_11

VS-16CTT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 2 x 8 A Base 2 common cathode FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses • Submicron trench technology Anode TO-220AB Anode 2 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2x8A 100 V 0.58 V 4 mA at 125 °C 175 °C Common cathode 36 mJ • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 APPLICATIONS • • • • • • • • High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling DC/DC systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 8 Apk, TJ = 125 °C (typical, per leg) Range CHARACTERISTICS VALUES 100 0.55 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C VS-16CTT100 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 163 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM EAS IAR 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied VALUES 8 16 850 210 67 IAS at TJ max. mJ A A UNITS Maximum peak one cycle non-repetitive surge current per leg Non-repetitive avalanche energy per leg Repetitive avalanche current per leg TJ = 25 °C, IAS = 1.5 A, L = 60 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 Revision: 10-Aug-11 Document Number: 94530 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTT100 www.vishay.com Vishay Semiconductors SYMBOL 8A TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TYP. 520 8.0 MAX. 0.72 0.85 0.58 0.69 65 4 10 000 μA mA pF nH V/μs V UNITS ELECTRICAL SPECIFICATIONS PARAMETER Forward voltage drop per leg VFM (1) 16 A 8A 16 A Reverse leakage current per leg Junction capacitance per leg Series inductance per leg Maximum voltage rate of change IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per device Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB (JEDEC) SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 175 2 RthJC DC operation 1 RthCS Mounting surface, smooth and greased 0.5 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) 16CTT100 °C/W UNITS °C Mounting torque Marking device Revision: 10-Aug-11 Document Number: 94530 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTT100 www.vishay.com Vishay Semiconductors 100 175°C 10 1 0.1 0.01 0.001 0.0001 0 20 40 60 80 100 100 Reverse Current - IR (mA) 150°C 125°C 100°C 75°C 50°C 25°C Tj = 175°C Instantaneous Forward Current - IF (A) Reverse Voltage - VR (V) 10 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Junction Capacitance - CT (pF) Tj = 125°C 100 Tj = 25°C 1 0.0 0.5 1.0 1.5 2.0 10 0 20 40 60 80 100 120 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) D = 0.75 D = 0.5 1 D = 0.33 D = 0.25 D = 0.2 0.1 Single Pulse (Thermal Resistance) 0.01 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Aug-11 Document Number: 94530 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTT100 www.vishay.com Vishay Semiconductors 7 180 Allowable Case Temperature (°C) Average Power Loss - (Watts) 6 5 4 3 2 1 0 170 DC 180° 120° 90° 60° 30° DC 160 Square wave (D=0.50) 80% rated Vr applied see note (1) 150 0 2 4 6 8 10 12 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 2 4 6 8 10 12 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM (A) 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 10-Aug-11 Document Number: 94530 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTT100 www.vishay.com Vishay Semiconductors 100 Avalanche Current (A) Tj = 25°C 10 Tj = 125°C 1 Tj = 175°C 0.1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Avalanche Energy (mJ) 10 Tj = 25°C Tj = 125°C Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 10-Aug-11 Document Number: 94530 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTT100 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 - 16 2 C 3 T 4 T 5 100 6 Vishay Semiconductors product Current rating (16 A) Circuit configuration: C = Common cathode Package: T = TO-220 - T = Trench Voltage code (100 V) Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95222 www.vishay.com/doc?95225 www.vishay.com/doc?95229 Revision: 10-Aug-11 Document Number: 94530 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1