16CTU04PBF

VS-16CTU04PbF Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt® Base common cathode 2 FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level Anode 3 TO-220AB Anode 1 2 Common cathode DESCRIPTION/APPLICATIONS FRED Pt® series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-220AB 2x8A 400 V 1.3 V See Recovery table 175 °C Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures per leg total device SYMBOL VRRM IF(AV) IFSM IFRM TJ, TStg TC = 155 °C, rated VR TC = 25 °C TC = 155 °C, rated VR, square wave, 20 kHz TEST CONDITIONS VALUES 400 8 16 100 16 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 400 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 400 TYP. 1.19 0.94 0.2 20 14 8.0 MAX. 1.3 1.0 10 500 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 94008 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04PbF Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μA, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 35 43 67 2.8 6.3 60 210 MAX. 60 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-220AB per leg per device SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 3.6 1.8 0.5 2.0 0.07 16CTU04 MAX. 175 4 2 50 12 (10) g oz. kgf · cm (lbf in) °C/W UNITS °C For technical questions within your region, please contact one of the following: Document Number: 94008 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 VS-16CTU04PbF Ultrafast Rectifier, 16 A FRED Pt® Vishay Semiconductors 100 1000 IR - Reverse Current (µA) 100 10 1 0.1 0.01 0.001 0.0001 0 IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 25 °C 10 1 TJ = 175 °C TJ = 150 °C TJ = 25 °C 0.1 0 0.5 1 1.5 2 2.5 100 200 300 400 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94008 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04PbF Vishay Semiconductors 180 Ultrafast Rectifier, 16 A FRED Pt® 90 80 If = 16 A If = 8 A Allowable Case Temperature (°C) 170 70 DC Square wave (D = 0.50) Rated VR applied trr (ns) 160 60 50 40 150 140 See note (1) 130 0 2 4 6 8 10 12 30 20 100 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 14 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 500 450 400 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8 A Average Power Loss (W) 12 10 8 6 4 2 0 0 2 4 6 8 10 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 350 Qrr (nC) RMS limit 300 250 200 150 100 50 0 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR For technical questions within your region, please contact one of the following: Document Number: 94008 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 VS-16CTU04PbF Ultrafast Rectifier, 16 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94008 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTU04PbF Vishay Semiconductors Ultrafast Rectifier, 16 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 4 4 5 6 16 2 - C 3 T 4 U 5 04 6 PbF 7 Vishay Semiconductors product Current rating (16 = 16 A) Circuit configuration: C = Common cathode Package: T = TO-220 Ultrafast recovery Voltage rating (04 = 400 V) PbF = Lead (Pb)-free 7 Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95222 www.vishay.com/doc?95225 For technical questions within your region, please contact one of the following: Document Number: 94008 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 6 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1