16TTS08SPBF

16TTS..SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES 2 Anode D2PAK 1 Cathode 3 Gate The 16TTS..SPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for RoHS* medium power switching and phase control COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). PRODUCT SUMMARY VT at 10 A ITSM VRRM < 1.4 V 200 A 800/1200 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 µm) copper Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 SINGLE-PHASE BRIDGE 2.5 6.3 14.0 THREE-PHASE BRIDGE 3.5 9.5 18.5 A UNITS MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 10 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform VALUES 10 16 800/1200 200 1.4 500 150 - 40 to 125 UNITS A V A V V/µs A/µs °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 1200 IRRM/IDRM AT 125 °C mA 10 16TTS08SPbF 16TTS12SPbF * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94589 Revision: 02-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 16TTS..SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IRMS ITSM I2 t I2√t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 16 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TEST CONDITIONS TC = 93 °C, 180° conduction, half sine wave VALUES TYP. MAX. 10 16 170 200 144 200 2000 1.4 24.0 1.1 VR = Rated VRRM/VDRM 200 500 150 V/µs A/µs 0.5 10 100 mA A2s A2√s V mΩ V A UNITS Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C VGD IGD TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 90 60 35 3.0 2.0 1.0 0.25 2.0 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.9 4 110 µs UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94589 Revision: 02-Jul-08 16TTS..SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient Approximate weight SYMBOL TJ, TStg TS RthJC RthJA For 10 s (1.6 mm from case) DC operation PCB mount (1) TEST CONDITIONS VALUES - 40 to 125 240 1.3 °C/W 40 2 0.07 Case style D2PAK (SMD-220) 16TTS08S 16TTS12S g oz. UNITS °C Vishay High Power Products Marking device Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. Document Number: 94589 Revision: 02-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 16TTS..SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A Max imum Average On-state Power Loss (W) 125 Maximum Allowable Case Temperature (°C) 120 115 110 105 100 95 90 0 2 16TTS.. Series R thJC (DC) = 1.3 °C/W 25 DC 180° 120° 90° 60° 30° 20 Conduction Angle 15 RMS Limit 10 Conduction Period 30° 60° 90° 120° 180° 4 6 8 10 12 5 16TTS.. Series TJ = 125°C 0 2 4 6 8 10 12 14 16 18 0 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 125 Maximum Allowable Case Temperature (°C) 120 115 Conduction Period 16TTS.. Series R thJC (DC) = 1.3 °C/W 180 160 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 110 105 100 95 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) 30° 140 120 60° 90° 120° 180° DC 100 16TTS..Series 80 1 10 100 Number Of Equal Amplitude Half C ycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Max imum Average On-state Power Loss (W) 16 14 12 10 8 6 4 2 0 0 180° 120° 90° 60° 30° RMS Limit Peak Half Sine Wave Forward Current (A) 18 200 180 160 140 120 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated V RRM Reapplied Conduction Angle 16TTS.. Series T J = 125°C 16TTS.. Series 1 2 3 4 5 6 7 8 9 10 11 80 0.01 0.1 Pulse Train Duration (s) 1 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94589 Revision: 02-Jul-08 16TTS..SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A 1000 16TTS.. Series Instantaneous On-state Current (A) Vishay High Power Products 100 10 T J = 25°C TJ = 125°C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (°C/W) 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 16TTS.. Series 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) TJ = -10 °C TJ = 25 °C TJ = 125 °C 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) 16TTS.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Document Number: 94589 Revision: 02-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 16TTS..SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ORDERING INFORMATION TABLE Device code 16 1 1 2 3 4 5 6 7 T 2 - T 3 S 4 12 5 S 6 TRL PbF 7 8 Current rating Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Standard recovery rectifier Voltage rating: Voltage code x 100 = VRRM S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 08 = 800 V 12 = 1200 V 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94589 Revision: 02-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1