175BGQ045

VS-175BGQ045 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode Anode PowerTab® • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS PowerTab® 175 A 45 V 0.7 V 640 mA at 125 °C 150 °C Single die 40 mJ • PowerTab® package • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The VS-175BGQ045 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 175 Apk (typical) TJ Range CHARACTERISTICS Rectangular waveform TC VALUES 175 103 45 8700 0.63 150 - 55 to 150 UNITS A °C V A V °C °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 175BGQ045 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 6 A, L = 2 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical TEST CONDITIONS 50 % duty cycle at TC = 103 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 175 8700 A 1550 40 6 mJ A UNITS A Revision: 17-Jun-11 Document Number: 94582 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-175BGQ045 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 100 A Forward voltage drop VFM (1) 175 A 100 A 175 A TJ = 150 °C, VR = 45 V Reverse leakage current IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % VR = Rated VR TEST CONDITIONS TJ = 25 °C TJ = 150 °C TYP. 0.55 0.67 0.49 0.63 1200 0.6 360 5600 3.5 10 000 MAX. 0.58 0.75 0.54 0.7 2000 2 640 pF nH V/μs mA V UNITS VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Measured from tab to mounting plane Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style PowerTab® SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 150 0.25 °C/W 0.20 5 0.18 1.2 (10) 2.4 (20) g oz. N·m (lbf · in) UNITS °C Mounting torque Marking device 175BGQ045 Revision: 17-Jun-11 Document Number: 94582 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-175BGQ045 www.vishay.com Vishay Semiconductors 10000 1000 100 10 1 0.1 0.01 1000 Reverse Current - IR (mA) 150°C 125°C 100°C 75°C 50°C 25°C Instantaneous Forward Current - IF (A) 100 Tj = 150°C 0 5 10 15 20 25 30 35 40 45 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 (pF) T 10 Junction Capacitance - C T = 25°C J Tj = 125°C Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1000 0 10 20 30 40 50 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance ZthJC (°C/W) D = 0.5 D = 0.33 0.1 D = 0.25 D = 0.2 D = 0.75 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 17-Jun-11 Document Number: 94582 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-175BGQ045 www.vishay.com Vishay Semiconductors 200 160 Allowable Case Temperature (°C) 140 120 100 80 60 0 50 100 150 200 250 300 Average Forward Current - IF(AV)(A) Square wave (D=0.50) 80% rated Vr applied see note (1) Average Power Loss - (Watts) 150 180° 120° 90° 60° 30° DC RMS Limit 100 DC 50 0 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive S urge Current - I FS (A) M 10000 At Any Rated Load Condition And With Rated VRRM Applied Following S urge 1000 10 100 1000 10000 S quare Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Document Number: 94582 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 17-Jun-11 VS-175BGQ045 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 - 175 BGQ 045 2 3 4 Vishay Semiconductors product Current rating Essential part number Voltage code = VRRM LINKS TO RELATED DOCUMENTS Dimensions Part marking information Application note www.vishay.com/doc?95240 www.vishay.com/doc?95370 www.vishay.com/doc?95179 Revision: 17-Jun-11 Document Number: 94582 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® DIMENSIONS in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 8.45 (0.33) 8.20 (0.32) 4.20 (0.16) 4.00 (0.15) Lead 1 12.40 (0.48) 12.10 (0.47) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.45 REF. (0.21 REF.) 5.20 (0.20) 4.95 (0.19) 3.09 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) 4.95 (0.19) 4.75 (0.18) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 39.8 (1.56) 39.6 (1.55) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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