181RKI40PBF

180RKI...PbF /181RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB ( TO-93) • RoHS complaint • Lead (Pb)-free • Designed and qualified for industrial level TO-209AB (TO-93) RoHS COMPLIANT TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 180 A • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 180 TC 80 285 3800 4000 72 66 400 to 1000 100 - 40 to 125 V µs °C kA2s A UNITS A °C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS PART NUMBER VOLTAGE CODE 40 180/181RKI 80 100 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 30 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94382 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 180RKI...PbF /181RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IRMS TEST CONDITIONS 180° conduction, half sine wave DC at 79 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I 2 √t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 180 80 285 3800 4000 3500 Sinusoidal half wave, intial TJ = TJ maximum 3660 72 66 61 56 720 0.83 0.89 0.92 0.81 1.35 600 1000 kA2√s V mΩ V mA kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π × IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π IT(AV)), TJ = TJ maximum Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V dV/dt = 20 V/µs VALUES 300 1.0 µs 100 UNITS A/µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum rated VDRM/VRRM applied VALUES 500 30 UNITS V/µs mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94382 Revision: 11-Aug-08 180RKI...PbF /181RKI...PbF Series Phase Control Thyristors (Stud Version), 180 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 130 65 35 2.0 1.2 0.9 10 TJ = TJ maximum, tp ≤ 5 ms TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. MAX. 10 2.0 3.0 20 5.0 150 2.5 mA V mA UNITS Vishay High Power Products W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting force, ± 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.15 K/W 0.04 31 (275) 24.5 (210) 280 UNITS °C Nm (lbf · in) g TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.050 0.063 0.080 0.118 0.225 RECTANGULAR CONDUCTION 0.032 0.059 0.082 0.124 0.228 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94382 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 180RKI...PbF /181RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A Maximum Allowable Case T emperature (°C) 130 120 110 Conduc tion Angle Maximum Allowable Case T emperature (°C) 130 120 110 181RKI Series RthJC (DC) = 0.15 K/W 181RKI Series R thJC (DC) = 0.15 K/ W Conduc tion Period 100 90 80 70 0 20 40 60 80 100 120 140 160 180 200 Average On-state Current (A) 30° 60° 90° 120° 180° 100 90 80 70 0 50 100 150 200 250 300 Average On-state Current (A) 30° 60° 90° 120° 180° DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-s tate Power Loss (W) 240 220 200 180 160 140 180° 120° 90° 60° 30° RMS Limit A S R th /W 2K 0. 3 0. W K/ 0.6 K/ W / KW .1 =0 e lt -D aR 120 100 80 60 0.8 K/ W 1K /W Conduc tion Angle 1.5 K /W 40 20 0 181RKI S eries T = 125°C J 2 K/ W 0 20 40 60 80 100 120 140 160 180 0 Average On-state Current (A) 25 50 75 100 125 Maximum Allowable Ambient T emperature (°C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) 350 300 250 200 DC 180° 120° 90° 60° 30° A hS Rt 0. 2 K/ W = 1 0. 0. 3 W K/ K/ W ta el -D R 150 RMSLimit Conduc tion Period 100 50 0 0 50 100 150 181RKI S eries TJ = 125°C 200 250 0.6 K/ W 0.8 K/ W 1 K/ W 1.5 K /W 2 K/ W 0 300 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94382 Revision: 11-Aug-08 180RKI...PbF /181RKI...PbF Series Phase Control Thyristors (Stud Version), 180 A Peak Half S Wave On-state Current (A) ine Vishay High Power Products 4000 Peak Half S Wave On-state Current (A) ine 4000 3500 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125°C J a 60 Hz 0.0083 s t a 50 Hz 0.0100 s t 3000 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. 3500 Initial T = 125°C J No Voltage Reapplied Rated VRRM Reapplied 3000 2500 2500 2000 181RKI S eries 1500 1 10 100 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) 2000 181RKI S eries 1500 0.01 0.1 Puls T e rain Duration (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) T = 25°C J 1000 T = 125°C J 181R S KI eries 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (K/ W) 1 S teady S tate Value R t hJC = 0.15 K/ W (DC Operation) 0.1 0.01 181RKI S eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal impedance ZthJC Characteristics Document Number: 94382 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 180RKI...PbF /181RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A 100 Instantaneous Gate Voltage (V) R tangular gate pulse ec a) Recommended load line for rated di/ dt: 20V, 30ohms; tr6µs b) R ecommended load line for 10