18TT045-F

18TT045-F Vishay High Power Products High Performance Schottky Generation 5.0, 18 A FEATURES • • • • • • • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level Base cathode 2 TO-220AC 1 Cathode 3 Anode APPLICATIONS PRODUCT SUMMARY IF(AV) VR VF at 18 A at 125 °C 18 A 45 V 0.51 V • • • • • • • • High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling DC/DC systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 18 Apk, TJ = 125 °C (typical) Range CHARACTERISTICS VALUES 45 0.48 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C 18TT045-F 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 5.5 A, L = 3.7 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse. See fig. 8 TEST CONDITIONS 50 % duty cycle at TC = 157 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied VALUES 18 1800 390 56 IAS at TJ max. mJ A A UNITS Document Number: 94661 Revision: 01-Apr-09 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 18TT045-F Vishay High Power Products High Performance Schottky Generation 5.0, 18 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 18 A Forward voltage drop VFM (1) TEST CONDITIONS TJ = 25 °C TJ = 125 °C TYP. 0.553 0.644 0.478 0.608 2.4 2.6 1350 8.0 - MAX. 0.58 0.69 0.51 0.65 150 12 10 000 UNITS 36 A 18 A 36 A V Reverse leakage current Junction capacitance Series inductance Maximum voltage rate of change Note (1) Pulse width < 300 µs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C VR = Rated VR µA mA pF nH V/µs VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 175 1.5 °C/W 0.50 2 0.07 6 (5) 12 (10) 18TT045 g oz. kgf · cm (lbf · in) UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94661 Revision: 01-Apr-09 18TT045-F High Performance Schottky Vishay High Power Products Generation 5.0, 18 A 100 100 175 °C IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 10 1 0.1 0.01 0.001 0.0001 150 °C 125 °C 100 °C 75 °C 50 °C 25 °C TJ = 175 °C 10 TJ = 25 °C TJ = 125 °C 1 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) 1000 100 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 0.1 Single pulse (Thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94661 Revision: 01-Apr-09 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 18TT045-F Vishay High Power Products High Performance Schottky Generation 5.0, 18 A 180 15 Allowable Case Temperature (°C) Average Power Loss (W) 170 12 DC 160 150 140 130 120 0 5 10 15 20 25 30 Square wave (D = 0.50) 80 % rated VR applied See note (1) 180° 120° 90° 60° 30° DC 9 RMS limit 6 3 0 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 10 000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94661 Revision: 01-Apr-09 18TT045-F High Performance Schottky Vishay High Power Products Generation 5.0, 18 A 1000 Avalanche Current (A) 100 TJ = 25 °C TJ = 125 °C TJ = 175 °C 10 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Avalanche Energy (mJ) 10 TJ = 25 °C TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94661 Revision: 01-Apr-09 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 18TT045-F Vishay High Power Products High Performance Schottky Generation 5.0, 18 A ORDERING INFORMATION TABLE Device code 18 1 1 2 3 4 5 - T 2 T 3 045 4 - F 5 Current rating (18 A) Package: T = TO-220 - T = Trench Voltage code (045 = 45 A) F = RoHS compliant and totally lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95221 www.vishay.com/doc?95068 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94661 Revision: 01-Apr-09 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1