1N3208 Series
Vishay High Power Products
Stud-Mounted Silicon Rectifier Diodes, 15 A
DESCRIPTION/FEATURES
• Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and other high reliability requirements
DO-203AB (DO-5)
RoHS
COMPLIANT
• RoHS compliant
PRODUCT SUMMARY
IF(AV) 15 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IF(AV) TEST CONDITIONS VALUES 15 (1) TC 50 Hz 60 Hz 50 Hz 60 Hz Range 150
(1)
UNITS A °C A A2 s A2√s V °C
IFSM I2 t I2 √ t VRRM TJ Note (1) JEDEC registered values
239 250 (1) 286 260 3870 50 to 600 - 65 to 175
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER CATHODE TO CASE 1N3208 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 Note (1) JEDEC registered values ANODE TO CASE 1N3208R 1N3209R 1N3210R 1N3211R 1N3212R 1N3213R 1N3214R VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V TJ = - 65 °C TO 175 °C 50 (1) 100 (1) 200 400 500
(1)
VRM, MAXIMUM DIRECT REVERSE VOLTAGE V TJ = - 65 °C TO 175 °C 50 (1) 100 (1) 200 (1) 300 (1) 400 (1) 500 (1) 600 (1)
300 (1)
(1) (1)
600 (1)
Document Number: 93496 Revision: 24-Jun-08
For technical questions, contact: ind-modules@vishay.com
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1N3208 Series
Vishay High Power Products
Stud-Mounted Silicon Rectifier Diodes, 15 A
FORWARD CONDUCTION
PARAMETER Maximum average forward current at case temperature SYMBOL IF(AV) TEST CONDITIONS 180° sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Maximum peak one cycle non-repetitive surge current Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing t = 8.3 ms I2 t Maximum I2t for individual device fusing Maximum for individual device fusing Maximum forward voltage drop Maximum average reverse current Notes (1) JEDEC registered values (2) I2t for time t = I2√t x √t x x I2√t I2√t (2) VFM IR(AV) t = 10 ms t = 8.3 ms VALUES 15 (1) 150 Following any rated load condition and with rated VRRM applied Following any rated load condition and with VRRM applied following surge = 0 With rated VRRM applied following surge, initial TJ = 150 °C With VRRM = 0 following surge, initial TJ = 150 °C
(1)
UNITS A °C
239 250 (1) A 284 297 286 260 A2s 403 368 3870 1.5 (1) 10
(1)
IFSM
t = 0.1 to 10 ms, VRRM = 0 following surge IF(AV) = 15 A (47.1 A peak), TC = 150 °C Maximum rated IF(AV) and TC = 150 °C
A2 √s V mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating and storage temperature range Maximum internal thermal resistance, junction to case Thermal resistance, case to sink Mounting torque minimum maximum SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads TEST CONDITIONS VALUES - 65 to 175 (1) 0.65 °C/W 0.25 2.3 (20) 3.5 (30) 28.5 1 JEDEC N·m (lbf · in) g oz. UNITS °C
Weight Case style Note (1) JEDEC registered values
DO-203AB (DO-5)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93496 Revision: 24-Jun-08
1N3208 Series
Stud-Mounted Vishay High Power Products Silicon Rectifier Diodes, 15 A
35 120 60° 180° 120° DC
Average Forward Current Over Full Cycle (A)
30
Ø
Average Forward Power Loss Over Full Cycle (W)
100 90 80 70 60 50 40 30 20 10 0 0 10 20 30
25 20 180° 15 120° 10 5 0 110 60°
DC
Conduction period
TJ = 140 °C
Ø
Conduction period
120
130
140
150
160
170
180
40
50
60
70
80
90
Maximum Allowable Case Temperature (°C)
Fig. 1 - Average Forward Current vs. Maximum Allowable Case Temperature
250
Average Forward Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level Forward Power Loss vs. Average Forward Current
105
Average Forward Power Loss Over Full Cycle (W)
At any rated load condition and with rated VRRM following surge
Peak Half Sine Wave Forward Current (A)
200
104
120° 180°
150 50 Hz 60 Hz
103
60° TJ = 140 °C DC
102
Ø
100
Conduction period 10 10 102 103 104
1
2
4
6 8 10
20
40 60
Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses
Average Forward Current Over Full Cycle (A)
Fig. 4 - Maximum High Level Forward Power Loss vs. Average Forward Current
Instantaneous Forward Current (A)
103
102 TJ = 140 °C 10 TJ = 25 °C 1 0 1 2 3 4 5 6 7
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Forward Voltage vs. Forward Current LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93496 Revision: 24-Jun-08 http://www.vishay.com/doc?95360 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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