1N3767

1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A/40 A/60 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2 t I2 √ t VRRM Range Note (1) JEDEC registered values TEST CONDITIONS TC 50 Hz 60 Hz 50 Hz 60 Hz 1N1183 35 (1) 140 (1) 480 500 (1) 1140 1040 16 100 50 to 600 (1) 1N3765 35 (1) 140 (1) 380 400 (1) 730 670 10 300 700 to 1000 (1) 1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000 50 to 600 (1) 1N2128A 60 (1) 140 (1) 860 900 (1) 3700 3400 52 500 50 to 600 (1) UNITS A °C A A2s A 2 √s V ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TJ = - 65 °C TO 200 °C (2)) V 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 1N2128A 1N2129A 1N2130A 1N2131A 1N2133A 1N2135A 1N2137A 1N2138A 50 (1) 100 (1) 150 (1) 200 300 400 500 600 700 800 900 1000 (1) (1) (1) (1) (1) (1) (1) (1) (1) VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = - 65 °C TO 200 °C (2)) V 50 (1) 100 (1) 150 (1) 200 (1) 300 (1) 400 (1) 500 (1) 600 (1) 700 (1) 800 (1) 900 (1) 1000 (1) 1N1183 1N1184 1N1185 1N1186 1N1187 1N1188 1N1189 1N1190 1N3765 1N3766 1N3767 1N3768 Notes (1) JEDEC registered values (2) For 1N1183 Series and 1N3765 Series T = - 65 °C to 190 °C C • Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR Document Number: 93492 Revision: 25-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature SYMBOL IF(AV) TEST CONDITIONS 1-phase operation, 180° sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing t = 8.3 ms I2 t Maximum I2t for individual device fusing Maximum I2√t for individual device fusing Maximum peak forward voltage at maximum forward current (IFM) VRRM = 700 VRRM = 800 Maximum average reverse current VRRM = 900 VRRM = 1000 Maximum rated IF(AV), VRRM and TC Notes (1) JEDEC registered values (2) I2t for time t = I2√t x √t x x IR(AV) Maximum rated IF(AV) and TC I2√t (2) VFM t = 10 ms t = 8.3 ms Following any rated load condition and with rated VRRM applied Following any rated load condition and with ½ VRRM applied following surge = 0 With rated VRRM applied following surge, initial TJ = TJ maximum With VRRM = 0 following surge, initial TJ = TJ maximum 1N1183 1N3765 1N1183A 1N2128A 35 (1) (1) UNITS A °C 35 140 (1) (1) 40 150 (1) (1) 60 140 (1) (1) 140 480 380 765 860 500 (1) 400 (1) 800 (1) 900 (1) A Maximum peak one cycle non-repetitive surge current IFSM 570 455 910 1000 595 475 950 1050 1140 1040 1610 1470 16 100 1.7 (1) 730 670 1030 940 10 300 1.8 (1) 110 5.0 (1) 4.0 3.0 2.0 (1) (1) (1) 2900 2650 4150 3750 41 500 1.3 (1) 126 2.5 (1) 3700 3400 A2s 5250 4750 52 500 1.3 (1) 188 10 (1) mA A 2 √s V A t = 0.1 to 10 ms, VRRM = 0 following surge TJ = 25 °C 110 10 (1) - www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93492 Revision: 25-May-09 1N1183, 1N3765, 1N1183A, 1N2128A Series Power Silicon Rectifier Diodes, 35 A/40 A/60 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating case temperature range Maximum storage temperature range Maximum internal thermal resistance, junction to case Thermal resistance, case to sink Maximum allowable mounting torque (+ 0 %, - 10 %) SYMBOL TC TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not lubricated thread, tighting on nut (2) Lubricated thread, tighting on nut (2) Vishay High Power Products TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS - 65 to 190 (1) - 65 to 175 (1) 1.00 (1) - 65 to 200 °C - 65 to 200 1.1 (1) 0.25 3.4 (30) 2.3 (20) 4.2 (37) 3.2 (28) 17 0.6 g oz. N·m (lbf · in) 0.65 (1) °C/W Not lubricated thread, tighting on hexagon (3) Lubricated thread, tighting on hexagon (3) Approximate weight Case style JEDEC DO-203AB (DO-5) Notes (1) JEDEC registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks Fig. 1 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N1183 and 1N3765 Series Fig. 2 - Typical Low Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Document Number: 93492 Revision: 25-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A Fig. 3 - Typical High Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Fig. 6 - Average Forward Current vs. Maximum Allowable Case Temperature, 1N1183A Series Fig. 4 - Typical Forward Voltage vs. Forward Current, 1N1183 and 1N3765 Series Fig. 7 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N1183A Series Fig. 5 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183 and 1N3765 Series Fig. 8 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N1183A Series www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93492 Revision: 25-May-09 1N1183, 1N3765, 1N1183A, 1N2128A Series Power Silicon Rectifier Diodes, 35 A/40 A/60 A Vishay High Power Products Fig. 9 - Maximum Forward Voltage vs. Forward Current, 1N1183A Series Fig. 12 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N2128A Series Fig. 10 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183A Series Fig. 13 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Fig. 11 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N2128A Series Fig. 14 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Document Number: 93492 Revision: 25-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A Fig. 15 - Maximum Forward Voltage vs. Forward Current, 1N2128A Series LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95360 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93492 Revision: 25-May-09 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) Ø 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) 1.03 (0.04) MAX. Ø 4.10 (0.16) Ø 3.80 (0.15) 4 (0.16) MIN. 25.4 (1.0) MAX. 10.8 (0.43) 11.4 (0.45) 10.7 (0.42) 11.5 (0.45) 1/4" 28UNF-2A for metric devices: M6 x 1 1.0 (0.04) MAX. 17.40 (0.68) MIN. Across flats Document Number: 95360 Revision: 29-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000