1N4006GP

1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER® • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 μA • High forward surge capability DO-204AL (DO-41) • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM (8.3 ms sine-wave) IFSM (square wave tp = 1 ms) IR VF TJ max. 1.0 A 50 V to 1000 V 30 A 45 A 5.0 μA 1.1 V 175 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-204AL, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for both consumer and automotive applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 75 °C Non-repetitive peak forward surge current square waveform TA = 25 °C (fig. 3) tp = 1 m s tp = 2 m s tp = 5 m s IR(AV) (1) I2t (2) TJ, TSTG (1) IFSM (1) SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT VRRM VRMS (1) VDC (1) 50 35 50 100 70 100 200 140 200 400 280 400 1.0 45 35 30 30 3.7 - 65 to + 175 600 420 600 800 560 800 1000 700 1000 V V V A IF(AV) (1) A Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length TA = 75 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range μA A2s °C Notes (1) JEDEC registered values (2) For device using on bridge rectifier application Document Number: 88504 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP thru 1N4007GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance TEST SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT CONDITIONS 1.0 A TA = 25 °C IR (1) TA = 125 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz trr 50 VF 1.1 5.0 μA V 2.0 μs CJ 8.0 pF Note (1) JEDEC registered values THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT RJA (1) RJL (1) 55 25 °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N 1N4004GP-E3/54 1N4004GP-E3/73 1N4004GPHE3/54 (1) UNIT WEIGHT (g) 0.335 0.335 0.335 0.335 PREFERRED PACKAGE CODE 54 73 54 73 BASE QUANTITY 5500 3000 5500 3000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging 13" diameter paper tape and reel Ammo pack packaging 1N4004GPHE3/73 (1) (1) Note AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.0 30 Average Forward Rectified Current (A) 0.8 Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 0.6 20 0.4 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 15 0.2 10 0 0 25 50 75 100 125 150 175 5 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve www.vishay.com 2 Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current For technical questions within your region, please contact one of the following: Document Number: 88504 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP thru 1N4007GP Vishay General Semiconductor 50 100 t p = 1 ms TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Peak Forward Surge Current (A) 45 40 35 30 25 20 15 Square Waveform 10 25 50 tp t p = 2 ms t p = 5 ms Junction Capacitance (pF) 100 125 10 75 1 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 3 - Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 100 10 Transient Thermal Impedance (°C/W) 1.6 Instantaneous Forward Current (A) 10 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Transient Thermal Impedance 10 Instantaneous Reverse Current (μA) TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Document Number: 88504 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP thru 1N4007GP Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Note 0.026 (0.66) • Lead diameter is for suffix “E” part numbers 0.023 (0.58) For technical questions within your region, please contact one of the following: Document Number: 88504 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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