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1N4151_07

1N4151_07

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    1N4151_07 - Small Signal Fast Switching Diodes - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4151_07 数据手册
1N4151 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • Extreme fast switches 94 9367 Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part 1N4151 Ordering code 1N4151-TR or 1N4151-TAP Type Marking 1N4151 Remarks Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Average forward current Power dissipation VR = 0 I = 4mm, TL = 45 °C l = 4mm, TL ≤ 25 °C tp = 1 µs Test condition Symbol VRRM VR IFSM IFRM IF IFAV Ptot Ptot Value 75 50 2 500 300 150 440 500 Unit V V A mA mA mA mW mW Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction temperature Storage temperature range Test condition Symbol RthJA Tj Tstg Value 350 175 - 65 to + 175 Unit K/W °C °C Thermal resistance junction to ambient air l = 4 mm, TL = constant Document Number 85523 Rev. 1.7, 16-Feb-07 www.vishay.com 1 1N4151 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Test condition IF = 50 mA V R = 50 V VR = 50 V, Tj = 150 °C I R = 5 µA VR = 0, f = 1 MHz, VHF = 50 mV IF = IR = 10 mA, iR = 1 mA IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω Symbol VF IR IR V(BR) CD trr trr 75 2 4 2 Min Typ. 880 14 Max 1000 50 50 Unit mV nA µA V pF ns ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 I R - Reverse Current (µA) Scattering Limit C D - Diode Capacitance (pF) 10 3.0 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 200 94 9153 f = 1 MHz Tj = 25 °C 1 0.1 V R = 50 V 0.01 94 9151 0.1 1 10 100 Tj - Junction Temperature (°C) V R - Reverse Voltage (V) Figure 1. Reverse Current vs. Junction Temperature Figure 3. Diode Capacitance vs. Reverse Voltage 1000 Tj = 100 °C I F - Forward Current (mA) 100 10 Tj = 25 °C 1 0.1 0 94 9152 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 85523 Rev. 1.7, 16-Feb-07 1N4151 Vishay Semiconductors Package Dimensions in millimeters (inches): DO35 Cathode Identification 0.55 max. (0.022) 1.7 (0.067) Rev. 6 - Date: 29.January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85523 Rev. 1.7, 16-Feb-07 1.5 (0.059) www.vishay.com 3 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) 1N4151 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85523 Rev. 1.7, 16-Feb-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
1N4151_07
物料型号: - 型号:1N4151 - 器件制造商:Vishay Semiconductors

器件简介: - 1N4151是一款小信号快速开关二极管,采用硅外延平面二极管技术制造,是一款无铅组件,符合RoHS 2002/95/EC和WEEE 2002/96/EC标准。

引脚分配: - 封装形式:DO35玻璃封装 - 阴极带颜色:黑色

参数特性: - 重复峰值反向电压:75V - 反向电压:50V - 峰值正向浪涌电流:2A(tp=1us) - 重复峰值正向电流:500mA - 正向连续电流:300mA - 平均正向电流(VR=0):150mA - 功率耗散(引线长度=4mm,TL=45°C):440mW - 功率耗散(引线长度=4mm,T≤25°C):500mW

功能详解: - 1N4151适用于极快的开关应用。 - 正向电压:在50mA电流下,典型值为1000mV。 - 反向电流:在50V反向电压下,典型值为50nA。 - 击穿电压:在5A电流下,典型值为75V。 - 二极管电容:在0V反向电压和1MHz频率下,典型值为2pF。 - 反向恢复时间:在10mA电流和1mA反向电流下,典型值为4ns;在10mA电流、6V反向电压和0.1倍反向电流下,典型值为2ns。

应用信息: - 1N4151适用于极快的开关应用。

封装信息: - 封装形式:DO35 - 重量:约125mg - 包装代码/选项:chip.com网站提供 - 包装方式:TR/10k每13英寸卷(52mm带),50k/盒;TAP/10k每Ammopack(52mm带),50k/盒
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