1N4448W-V_12

1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4448W-V Ordering code 1N4448W-V-GS18 or 1N4448W-V-GS08 Type Marking A3 Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation 1) Test condition Symbol VR VRM Value 75 100 1501) 500 5001) Unit V V mA mA mW f ≥ 50 Hz t < 1 s and Tj = 25 °C IF(AV) IFSM Ptot Valid provided that electrodes are kept at ambient temperature. Document Number 85722 Rev. 1.4, 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N4448W-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature 1) Test condition Symbol RthJA Tj Tstg Value 3501) 150 - 65 to + 150 Unit K/W °C °C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 5 m A IF = 100 mA V R = 20 V Leakage current Capacitance Reverse recovery time Rectification efficiency V R = 75 V VR = 20 V, TJ = 150 °C VF = VR = 0 V IF = 10 mA to IR = 10 mA, VR = 6 V, RL = 100 Ω f = 100 MHz, VRF = 2 V trr ην 0.45 Symbol VF VF IR IR IR Min. 0.62 Typ. Max. 0.72 1 25 5 50 4 4 Unit V V nA µA µA pF ns Rectification Efficieny Measurement Circuit 60 Ω VRF = 2 V 2 nF 5 kΩ VO 17436 www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85722 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.4, 17-Aug-10 1N4448W-V Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified 103 1.1 102 Tj = 100 °C Tj = 25 °C 1.0 Tj = 25 °C f = 1 MHz IF (mA) CD (0 V) 10 CD (VR) 0.9 1 0.8 10- 1 0.7 10- 2 0 18105 1 2 17440 0 2 4 6 8 10 VF (V) VR (V) Figure 1. Forward characteristics Figure 4. Relative Capacitance vs. Reverse Voltage 104 5 2 Tj = 25 °C f = 1 kHz 104 5 2 103 5 103 5 2 R f (Ω ) IR (nA) 2 102 5 2 102 5 2 10 5 2 10 5 2 VR = 20 V 1 10-2 17438 10-1 1 10 102 17441 0 100 200 IF (mA) Tj (°C) Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 5. Leakage Current vs. Junction Temperature mW 1000 900 800 Ptot 700 600 500 400 300 200 100 0 0 100 200 °C 17439 Tamb Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 85722 Rev. 1.4, 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 1N4448W-V Vishay Semiconductors 18106 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Package Dimensions in millimeters (inches): SOD-123 0.1 (0.004) max. 1.35 (0.053) 8° 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar 2.85 (0.112) 2.55 (0.100) 0.15 (0.006) 0.10 (0.004) 1 (0.039) 0.2 (0.008) 0° to Mounting Pad Layout 0.85 (0.033) 0.85 (0.033) 0.65 (0.026) 0.45 (0.018) 3.85 (0.152) 3.55 (0.140) 1.40 (0.055) 1.7 (0.067) 2.5 (0.098) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85722 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.4, 17-Aug-10 0.85 (0.033) Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000