1N4448WS-V_12

1N4448WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448-V • Silicon Epitaxial Planar Diode • Fast switching diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4448WS-V Ordering code 1N4448WS-V-GS18 or 1N4448WS-V-GS08 Type Marking A3 Remarks Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge forward current Power dissipation 1) Test condition Symbol VR VRM Value 75 100 150 1) 350 200 1) Unit V V mA mA mW f ≥ 50 Hz t < 1 s and Tj = 25 °C IF(AV) IFSM Ptot Valid provided that electrodes are kept at ambient temperature. Document Number 81387 Rev. 1.1, 12-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N4448WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature 1) Test condition Symbol RthJA Tj Tstg Value 650 1) Unit K/W °C °C 150 - 65 to + 150 Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Test condition IF = 5 m A IF = 100 mA V R = 20 V V R = 75 V VR = 20 V, Tj = 150 °C Diode capacitance Reverse recovery time Rectification efficiency VF = VR = 0 V IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 Ω f = 100 MHz, VRF = 2 V Symbol VF VF IR IR IR CD trr ην 0.45 Min. 620 Typ. Max. 720 1000 25 5 50 4 4 Unit mV mV nA µA µA pF ns Rectification Efficiency Measurement Circuit 60 Ω VRF = 2 V 2 nF 5 kΩ VO 17436 www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 81387 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 12-Aug-10 1N4448WS-V Vishay Semiconductors Typical Characteristics (Tamb = 25 °C, unless otherwise specified) 103 1.1 102 Tj = 100 °C Tj = 25 °C 1.0 Tj = 25 °C f = 1 MHz IF (mA) CD (0 V) 10 CD (VR) 0.9 1 0.8 10- 1 0.7 10- 2 0 18105 1 2 17440 0 2 4 6 8 10 VF (V) VR (V) Figure 1. Forward Characteristics Figure 4. Relative Capacitance vs. Reverse Voltage 104 5 2 Tj = 25 °C f = 1 kHz 104 5 2 103 5 103 5 2 R f (Ω ) IR (nA) 2 102 5 2 102 5 2 10 5 2 10 5 2 VR = 20 V 1 10-2 17438 10-1 1 10 102 0 17441 100 200 IF (mA) Tj (°C) Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 5. Leakage Current vs. Junction Temperature 250 Ptot - Power Dissipation (mW) 200 150 100 50 0 0 20324 50 100 150 200 Tamb - Ambient Temperature (°C) Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 81387 Rev. 1.1, 12-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 1N4448WS-V Vishay Semiconductors 100 5 4 3 2 I n = tP/T IFRM tP T T = 1/fP 10 IFRM (A) n=0 0.1 0.2 0.5 5 4 3 2 t 1 5 4 3 2 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Package Dimensions in millimeters (inches): SOD-323 1.15 (0.045) 0.8 (0.031) 0.2 (0.008) 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) Cathode bar 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Foot print recommendation: 0.6 (0.024) 1.5 (0.059) 1.1 (0.043) 0° to 8 ° 0.1 (0.004) max. 0.15 (0.006) 0.10 (0.004) 0.6 (0.024) 1.6 (0.063) 17443 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 81387 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 12-Aug-10 0.6 (0.024) Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000