1N5625

1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading 949588 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg APPLICATIONS • Rectification diode, general purpose PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 TYPE DIFFERENTIATION VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 3 A PACKAGE SOD-64 SOD-64 SOD-64 SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2*t-rating Junction and storage temperature range tp = 20 μs, half sine wave, Tj = 175 °C I(BR)R = 1 A, Tj = 175 °C TEST CONDITION PART 1N5624 See electrical characteristics 1N5625 1N5626 1N5627 tp = 10 ms, half sinewave SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV PR ER i2*t Tj = Tstg VALUE 200 400 600 800 100 18 3 1000 20 40 - 55 to + 175 UNIT V V V V A A A W mJ A2*s °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 25 70 UNIT K/W K/W www.vishay.com 1 Document Number: 86063 Rev. 1.5, 21-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge TEST CONDITION IF = 3 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 μA, tp/T = 0.01, tp = 0.3 ms VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, dI/dt = 5 A/μs, VR = 50 V IF = 1 A, dI/dt = 5 A/μs PART SYMBOL VF IR IR V(BR) CD trr trr Qrr MIN. TYP. 0.1 5 40 3.5 4.5 8 MAX 1 1 10 1600 60 5 7.5 12 UNIT V μA μA V pF μs μs μC TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 40 IFAV - Average Forward Current (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 R thJA =70K/W PCB: d=25mm V R =V RRM half sinewave R thJA =25K/W l=10mm RthJA - Therm. Resist. Junction/Ambient (K/W) 30 20 l 10 l 0 0 94 9563 TL = constant 5 10 15 20 25 30 16393 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 I - Lead Length (mm) T amb- Ambient Temperature (°C) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100.000 10.000 1.000 0.100 0.010 0.001 16392 1000 V R = V RRM I R – R everse Current ( A ) – Forward Current ( A ) T j =175°C 100 T j =25°C 10 I F 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F – F orward Voltage ( V ) 25 16394 50 75 100 125 150 T j – Junction Temperature ( °C ) 175 Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86063 Rev. 1.5, 21-Sep-10 1N5624, 1N5625, 1N5626, 1N5627 Standard Avalanche Sinterglass Diode Vishay Semiconductors 300 PR – R everse Power Dissipation ( mW ) V R = V RRM CD – Diode Capacitance ( pF ) 100 90 80 70 60 50 40 30 20 10 0 f=1MHz 250 200 150 100 50 0 25 PR –L imit @ 100%V R PR –L imit @ 80%V R 16395 50 75 100 125 150 T j – Junction Temperature ( °C ) 175 16396 0.1 1.0 10.0 V R – R everse Voltage ( V ) 100.0 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86063 Rev. 1.5, 21-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1