1N5625GP

1N5625GP

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    1N5625GP - Glass Passivated Junction Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5625GP 数据手册
1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER ® • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. 3.0 A 200 V to 800 V 125 A 5.0 μA 0.95 V 175 °C For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. MECHANICAL DATA Case: DO-201AD, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1) PARAMETER Maximum repetitive peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 70 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at TA = 70 °C Operating junction and storage temperature range Note (1) JEDEC registered values SYMBOL VRRM VDC IF(AV) IFSM IR(AV) TJ, TSTG 1N5624GP 200 200 1N5625GP 400 400 3.0 125 200 - 65 to + 175 1N5626GP 600 600 1N5627GP 800 800 UNIT V V A A μA °C Document Number: 88524 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624GP thru 1N5627GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time Typical junction capacitance TEST CONDITIONS 3.0 A TA = 25 °C TA = 70 °C TA = 25 °C TA = 150 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF (1)(2) 1N5624GP 1N5625GP 1.0 V 0.95 5.0 IR trr CJ μA 300 3.0 40 200 μs pF 1N5626GP 1N5627GP UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) JEDEC registered values THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) 1N5624GP 1N5625GP 20 1N5626GP 1N5627GP UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N 1N5626GP-E3/54 1N5626GP-E3/73 1N5626GPHE3/54 (1) UNIT WEIGHT (g) 1.28 1.28 1.28 1.28 PREFERRED PACKAGE CODE 54 73 54 73 BASE QUANTITY 1400 1000 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging 13" diameter paper tape and reel Ammo pack packaging 1N5626GPHE3/73 (1) (1) Note AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 1000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 3.0 Average Forward Rectified Current (A) Average Forward Current (A) 125 150 175 2.0 100 1.0 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0 0 25 50 75 100 10 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current For technical questions within your region, please contact one of the following: Document Number: 88524 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 1N5624GP thru 1N5627GP Vishay General Semiconductor 100 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle Junction Capacitance (pF) 10 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 Instantaneous Reverse Current (μA) TJ = 125 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88524 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
1N5625GP
物料型号: - 1N5624GP至1N5627GP,由Vishay General Semiconductor生产。

器件简介: - 这些器件是玻璃钝化结整流器,具有超结结构,适用于高可靠性的应用。它们还具有无腔室的玻璃钝化结、低正向电压降、低漏电流、高正向浪涌能力,符合环境标准MIL-S-19500,并通过275°C最大10秒的浸锡测试,符合JESD 22-B106标准。

引脚分配: - 引脚为无铅的,按照J-STD-002和JESD 22-B102标准可焊。

参数特性: - 最大重复峰值反向电压(VRRM):200V至800V - 最大直流阻断电压(Vpc):200V至800V - 最大平均正向整流电流(IF(AV)):3.0A(仅1N5625GP型号) - 峰值正向浪涌电流(IFSM):125A(仅1N5624GP型号) - 最大全负载反向电流(IR(AV)):200μA(仅1N5624GP型号) - 运行和存储结温范围(TJ,TSTG):-65至+175°C

功能详解: - 这些器件适用于一般电源整流、逆变器、转换器和自由轮流通用二极管应用。

应用信息: - 用于电源整流、逆变器、转换器和自由轮流通用二极管应用。

封装信息: - 封装类型为DO-201AD,是模塑环氧树脂覆盖玻璃体。符合UL 94 V-0可燃性等级。基材P/N-E3和P/NHE3均符合RoHS标准,其中E3后缀符合JESD 201 class 1A须根测试,HE3后缀符合JESD 201 class 2须根测试。极性通过色带表示阴极端。
1N5625GP 价格&库存

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